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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1854-1878

2008

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IEEE_Xplore

Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems

IEEE transactions on nuclear science, 2024-01, Vol.71 (1), p.31-66

2024

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IEEE_Xplore

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Journal of applied physics, 2023-11, Vol.134 (17)

2023

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Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1465-1472

2019

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IEEE_Xplore

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1581-1589

2020

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IEEE_Xplore

Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Microelectronics and reliability, 2020-11, Vol.114, p.113877, Article 113877

2020

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Real-time soft-error rate measurements: A review

Microelectronics and reliability, 2014-08, Vol.54 (8), p.1455-1476

2014

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Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation

Microelectronics and reliability, 2020-11, Vol.114, p.113871, Article 113871

2020

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Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Microelectronics and reliability, 2020-11, Vol.114, p.113885, Article 113885

2020

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Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Microelectronics and reliability, 2018-09, Vol.88-90, p.920-924

2018

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Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

Microelectronics and reliability, 2021-04, Vol.119, p.114087, Article 114087

2021

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Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

Microelectronics and reliability, 2019-09, Vol.100-101, p.113457, Article 113457

2019

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Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2658-2665

2012

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IEEE_Xplore

Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.501-511

2022

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IEEE_Xplore

Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.714-722

2012

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IEEE_Xplore

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2284-2288

2014

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Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1498-1500

2014

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IEEE_Xplore

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3249-3257

2012

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IEEE_Xplore

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2083-2090

2009

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IEEE_Xplore

Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Materials science & engineering. R, Reports : a review journal, 1998-05, Vol.22 (6), p.269-322

1998

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Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2048-2054

2008

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IEEE_Xplore

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

Journal of non-crystalline solids, 2011-04, Vol.357 (8), p.1884-1887

2011

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The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation

IEEE transactions on nuclear science, 2012-04, Vol.59 (2), p.303-313

2012

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IEEE_Xplore

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

Solid-state electronics, 2006-04, Vol.50 (4), p.716-721

2006

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Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3527-3534

2014

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IEEE_Xplore

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Modeling and Simulation of Single-Event Effects in Digital Devices and ICs

Multiscale, Multiphysics Modeling and Simulation of Single-Event Effects in Digital Electronics: From Particles to Systems

New insights into diffusion–collection modeling of radiation-induced charge in semiconductor devices

Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications

Real-time soft-error rate measurements: A review

Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation

Reliability-driven pin assignment optimization to improve in-orbit soft-error rate

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge

Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

Real-Time Characterization of Neutron-Induced SEUs in Fusion Experiments at WEST Tokamak During D-D Plasma Operation

Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

Tantalum pentoxide (Ta 2O 5) thin films for advanced dielectric applications

Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

The Plateau de Bure Neutron Monitor: Design, Operation and Monte Carlo Simulation

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits

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