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RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

IEEE electron device letters, 2007-05, Vol.28 (5), p.354-356

2007

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High optical quality AlInGaN by metalorganic chemical vapor deposition

Applied physics letters, 1999-11, Vol.75 (21), p.3315-3317

1999

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Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

Applied physics letters, 2000-08, Vol.77 (6), p.821-823

2000

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Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

Applied physics letters, 2001-12, Vol.79 (23), p.3803-3805

2001

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Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Applied physics letters, 2002-04, Vol.80 (17), p.3099-3101

2002

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Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

Applied physics letters, 2000-07, Vol.77 (1), p.97-99

2000

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Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 ≤ x ≤ 0.13)

Journal of electronic materials, 2002, Vol.31 (1), p.L1-L6

2002

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Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

Applied surface science, 1997-03, Vol.112, p.98-101

1997

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Self-assembled AlInGaN quaternary superlattice structures

Applied physics letters, 2001-09, Vol.79 (11), p.1616-1618

2001

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RF Power Measurements of InAlN/GaN Unstrained HEMTs on @@iSiC@ Substrates at 10 GHz

IEEE electron device letters, 2007-05, Vol.28 (5), p.354-356

2007

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Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1−yNy (0⩽y⩽0.08)

Applied physics letters, 2002-04, Vol.80 (14), p.2475-2477

2002

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A Model for Indium Incorporation in the Growth of InGaN Films

MRS proceedings, 1996, Vol.449, Article 85

1996

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Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-09, Vol.23 (5), p.1849-1855

2005

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In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-09, Vol.23 (5), p.2007-2013

2005

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Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

MRS proceedings, 2001, Vol.692, Article H1.9.1

2001

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Stacked InGaN/AlGaN Double Heterostructures

MRS proceedings, 1996, Vol.449, Article 1161

1996

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Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e43

1996

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In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-07, Vol.23 (4), p.1386-1397

2005

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The Learning Healthcare (Data) System: Virtual Data Warehouse Data Capture Revisited

Journal of Patient-Centered Research and Reviews, 2016-08, Vol.3 (3), p.226-227

2016

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Growth and Characterization of AllnGaN/InGaN Heterostructures

MRS proceedings, 1996, Vol.423, Article 341

1996

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RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

High optical quality AlInGaN by metalorganic chemical vapor deposition

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 ≤ x ≤ 0.13)

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

Self-assembled AlInGaN quaternary superlattice structures

RF Power Measurements of InAlN/GaN Unstrained HEMTs on @@iSiC@ Substrates at 10 GHz

Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1−yNy (0⩽y⩽0.08)

A Model for Indium Incorporation in the Growth of InGaN Films

Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

Stacked InGaN/AlGaN Double Heterostructures

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

The Learning Healthcare (Data) System: Virtual Data Warehouse Data Capture Revisited

Growth and Characterization of AllnGaN/InGaN Heterostructures

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