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Optimization of the MOVPE growth of GaN on sapphire

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.147-153

1997

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MOVPE growth and characterization of AlxGa1-xN

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1-3), p.219-222

1997

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Raman determination of phonon deformation potentials in α-GaN

Solid state communications, 1996, Vol.100 (4), p.207-210

1996

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Caracterization of AIN buffer layers on (0001)-sapphire substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.32-37

1997

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Influence of the [formula omitted] molar ratio on the structural and electronic properties of MOVPE grown GaN

Solid-state electronics, 1997-02, Vol.41 (2), p.315-317

1997

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Gain of optically excited ZnCdSeZnSe quantum wells

Solid state communications, 1996, Vol.97 (3), p.187-192

1996

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Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

Journal of applied physics, 1997-05, Vol.81 (9), p.6449-6454

1997

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Influence of the growth rate on the morphology of electrodeposited zinc oxide

Superlattices and microstructures, 2014-09, Vol.73, p.281-289

2014

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MOVPE growth of zincblende magnesium sulphide

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.117-120

1996

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MOVPE of high quality ZnSe: Role of mismatch on reflectivity and photoconductivity

Journal of crystal growth, 1990-04, Vol.101 (1), p.204-207

1990

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Er doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates

MRS proceedings, 2003, Vol.764, Article C3.50

2003

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Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes

MRS proceedings, 2003, Vol.764, Article C3.48

2003

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High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications

MRS proceedings, 2003, Vol.764, Article C3.49

2003

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Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces

Thin solid films, 1998-12, Vol.336 (1), p.381-385

1998

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Growth of 3C-SiC on Si by Low Temperature CVD

Materials science forum, 2001-01, Vol.353-356, p.159-162

2001

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Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures

Thin solid films, 1998-12, Vol.336 (1), p.326-331

1998

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Fabrication and photoluminescence of GaN/sapphire submicron-scale structures with nanometre scale resolution

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.335-339

1999

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Luminescence and absorption of GaN films under high excitation

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.196-200

1997

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Optical gain in ZnS epilayers

Solid state communications, 1996-05, Vol.98 (8), p.695-700

1996

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Preface

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-01, Vol.43 (1-3), p.ix

1997

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Photoluminescence Characterisation of Triangular Lattices of Holes and Pillars Etched in GaN Epilayers

physica status solidi (b), 1999-11, Vol.216 (1), p.669-673

1999

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Optical nonlinearities of gallium nitride

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.197-200

1997

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Light amplification due to free and localized exciton states in ZnCdSe GRINSCH structures

Applied physics. A, Materials science & processing, 1998-07, Vol.67 (1), p.121-124

1998

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A Raman study of coupled plasmon—LO phonon modes at ZnSe—GaAs interfaces

Journal of crystal growth, 1998-02, Vol.184, p.188-192

1998

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Low pressure metalorganic vapour-phase epitaxy growth of ZnTe using triethylamine dimethyl zinc adduct

Journal of crystal growth, 1993-10, Vol.133 (1), p.101-107

1993

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Optimization of the MOVPE growth of GaN on sapphire

MOVPE growth and characterization of AlxGa1-xN

Raman determination of phonon deformation potentials in α-GaN

Caracterization of AIN buffer layers on (0001)-sapphire substrates

Influence of the [formula omitted] molar ratio on the structural and electronic properties of MOVPE grown GaN

Gain of optically excited ZnCdSeZnSe quantum wells

Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

Influence of the growth rate on the morphology of electrodeposited zinc oxide

MOVPE growth of zincblende magnesium sulphide

MOVPE of high quality ZnSe: Role of mismatch on reflectivity and photoconductivity

Er doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates

Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes

High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications

Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces

Growth of 3C-SiC on Si by Low Temperature CVD

Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures

Fabrication and photoluminescence of GaN/sapphire submicron-scale structures with nanometre scale resolution

Luminescence and absorption of GaN films under high excitation

Optical gain in ZnS epilayers

Preface

Photoluminescence Characterisation of Triangular Lattices of Holes and Pillars Etched in GaN Epilayers

Optical nonlinearities of gallium nitride

Light amplification due to free and localized exciton states in ZnCdSe GRINSCH structures

A Raman study of coupled plasmon—LO phonon modes at ZnSe—GaAs interfaces

Low pressure metalorganic vapour-phase epitaxy growth of ZnTe using triethylamine dimethyl zinc adduct

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