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Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding

Journal of lightwave technology, 2011-06, Vol.29 (12), p.1847-1851

2011

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Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slab

Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2556-2559

2010

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Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3240-3244

2009

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Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics

Physica. E, Low-dimensional systems & nanostructures, 2010-09, Vol.42 (10), p.2765-2767

2010

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Influence of Substrate Resistivity on Porous Silicon Small-Signal RF Properties

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4654-4657

2020

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Low-Temperature Measurements on Germanium-on-Insulator pMOSFETs: Evaluation of the Background Doping Level and Modeling of the Threshold Voltage Temperature Dependence

ECS transactions, 2009-05, Vol.19 (4), p.145-152

2009

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Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μ m band

Applied physics letters, 2010-01, Vol.96 (4), p.043101-043101-3

2010

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MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

Optics express, 2012-06, Vol.20 (13), p.13612-13621

2012

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Photonic-Electronic Integration With Bonding

IEEE journal of selected topics in quantum electronics, 2014-07, Vol.20 (4), p.350-358

2014

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Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laser

Optics express, 2011-01, Vol.19 (3), p.2105-2110

2011

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2690-2698

2007

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Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

Journal of crystal growth, 2011-01, Vol.315 (1), p.114-118

2011

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(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI

ECS transactions, 2016, Vol.75 (8), p.505-512

2016

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Wafer Level High-Speed Germanium Photodiode Array Integration

IEEE journal of selected topics in quantum electronics, 2011-05, Vol.17 (3), p.526-530

2011

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Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques

ECS transactions, 2015-03, Vol.66 (4), p.57-65

2015

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A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

ECS transactions, 2015-03, Vol.66 (4), p.47-56

2015

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Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 [micro]m band for silicon photonics

Journal of crystal growth, 2011-01, Vol.315 (1), p.114-118

2011

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Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands

The European physical journal. B, Condensed matter physics, 2013-04, Vol.86 (4), Article 140

2013

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Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates

Applied physics letters, 2008-07, Vol.93 (2), p.22109

2008

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Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate

Applied physics express, 2011-04, Vol.4 (4), p.45201

2011

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Challenges in scaling of CMOS devices towards 65 nm node

Journal of Telecommunications and Information Technology, 2005-03 (1), p.3-6

2005

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Direct and Polymer Bonding of III-V to Processed Silicon-On-Insulator for Hybrid Silicon Evanescent Lasers Fabrication

ECS transactions, 2010, Vol.33 (4), p.403-410

2010

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Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

2013 IEEE International Electron Devices Meeting, 2013, p.26.6.1-26.6.4

2013

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Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

IEEE electron device letters, 2010-05, Vol.31 (5), p.419-421

2010

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Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding

Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slab

Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics

Influence of Substrate Resistivity on Porous Silicon Small-Signal RF Properties

Low-Temperature Measurements on Germanium-on-Insulator pMOSFETs: Evaluation of the Background Doping Level and Modeling of the Threshold Voltage Temperature Dependence

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μ m band

MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices

Photonic-Electronic Integration With Bonding

Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laser

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI

Wafer Level High-Speed Germanium Photodiode Array Integration

Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques

A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 [micro]m band for silicon photonics

Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands

Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates

Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate

Challenges in scaling of CMOS devices towards 65 nm node

Direct and Polymer Bonding of III-V to Processed Silicon-On-Insulator for Hybrid Silicon Evanescent Lasers Fabrication

Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

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