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Raman spectra of YBa2(Cu1−xMx)3O7−δ with transition metal dopants of Fe, Co, and Zn

Physica. C, Superconductivity, 1990-10, Vol.171 (1-2), p.77-86

1990

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Effect of substitutional doping on the 1.7 eV electronic transition of YBa 2(Cu 1− xM x) 3O 7−δ for M=Co, Fe, Ni and Zn

Physica. C, Superconductivity, 1991, Vol.175 (1), p.17-26

1991

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Spectroscopic ellipsometry studies of YBa sub 2 Cu sub 3 O sub 7 minus. delta. deposited on SrTiO sub 3

Journal of applied physics, 1991-06, Vol.69:12

1991

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Raman spectra of YBa 2(Cu 1−xM x) 3O 7−δ with transition metal dopants of Fe, Co, and Zn

Physica. C, Superconductivity, 1990, Vol.171 (1), p.77-86

1990

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Effect of substitutional doping on the 1.7 eV electronic transition of YBa2(Cu1-xMx)3O7-δ for M=Co, Fe, Ni and Zn

Physica. C, Superconductivity, 1991-04, Vol.175 (1-2), p.17-26

1991

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Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces

Thin solid films, 2000-12, Vol.380 (1), p.32-35

2000

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Carbon-associated Si(001)-c(4×4) reconstruction dosed with hydrogen

Surface science, 2000-05, Vol.454, p.201-206

2000

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Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth

Journal of crystal growth, 2003-08, Vol.256 (1), p.1-6

2003

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MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED

Thin solid films, 2000-12, Vol.380 (1), p.259-262

2000

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A particular epitaxial Si1-yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

Journal of crystal growth, 1995-12, Vol.157 (1-4), p.420-425

1995

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The Ge Stranski-Krastanov growth mode on Si(001) (2 × 1) tested by X-ray photoelectron and Auger electron diffraction

Surface science, 1993-07, Vol.291 (1), p.110-116

1993

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Selective thermal — as opposed to non-selective plasma — nitridation of SiGe related materials examined by in situ photoemission techniques

Journal of non-crystalline solids, 1995-07, Vol.187, p.319-323

1995

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X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

Applied surface science, 1996, Vol.99 (2), p.169-183

1996

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Electron cyclotron resonance plasma ion beam effects on the formation of SiC on Si(001) characterized by in-situ photoemission

Thin solid films, 1994-04, Vol.241 (1), p.305-309

1994

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Ge segregation tested by X-ray photoelectron diffraction and surface atom titration during the first stage of Si heteroepitaxy on Ge(001)2 × 1

Surface science, 1996-05, Vol.352, p.634-640

1996

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Observation of Si out-diffusion related defects in SiC growth on Si(001)

Materials science & engineering. B, Solid-state materials for advanced technology, 1995, Vol.29 (1), p.110-113

1995

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A particular epitaxial Si 1 − yC y alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

Journal of crystal growth, 1995, Vol.157 (1), p.420-425

1995

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Atomic structure of carbon-induced Si(001)c(4x4) reconstruction as a Si-Si homodimer and C-Si heterodimer network

Physical review. B, Condensed matter and materials physics, 2001, Vol.64 (1), p.035306-1

2001

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The Ge Stranski-Krastanov growth mode on Si(01)(2 x 1) tested by X-ray photoelectron and Auger electron diffraction

Surface science letters, 1993-07, Vol.291 (1), p.A565-A565

1993

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The use of fluorescence anisotropy decay of poly d(A-T) ethidium bromide complex to estimate the unwinding angle of the double helix

Biophysical chemistry, 1975-01, Vol.3 (2), p.142-146

1975

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A particular epitaxial Si1 −yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

Selected Topics in Group IV and II–VI Semiconductors, 1996, p.420-425

1996

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Raman spectra of YBa2(Cu1−xMx)3O7−δ with transition metal dopants of Fe, Co, and Zn

Effect of substitutional doping on the 1.7 eV electronic transition of YBa 2(Cu 1− xM x) 3O 7−δ for M=Co, Fe, Ni and Zn

Spectroscopic ellipsometry studies of YBa sub 2 Cu sub 3 O sub 7 minus. delta. deposited on SrTiO sub 3

Raman spectra of YBa 2(Cu 1−xM x) 3O 7−δ with transition metal dopants of Fe, Co, and Zn

Effect of substitutional doping on the 1.7 eV electronic transition of YBa2(Cu1-xMx)3O7-δ for M=Co, Fe, Ni and Zn

Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces

Carbon-associated Si(001)-c(4×4) reconstruction dosed with hydrogen

Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth

MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED

A particular epitaxial Si1-yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

The Ge Stranski-Krastanov growth mode on Si(001) (2 × 1) tested by X-ray photoelectron and Auger electron diffraction

Selective thermal — as opposed to non-selective plasma — nitridation of SiGe related materials examined by in situ photoemission techniques

X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

Electron cyclotron resonance plasma ion beam effects on the formation of SiC on Si(001) characterized by in-situ photoemission

Ge segregation tested by X-ray photoelectron diffraction and surface atom titration during the first stage of Si heteroepitaxy on Ge(001)2 × 1

Observation of Si out-diffusion related defects in SiC growth on Si(001)

A particular epitaxial Si 1 − yC y alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

Atomic structure of carbon-induced Si(001)c(4x4) reconstruction as a Si-Si homodimer and C-Si heterodimer network

The Ge Stranski-Krastanov growth mode on Si(01)(2 x 1) tested by X-ray photoelectron and Auger electron diffraction

The use of fluorescence anisotropy decay of poly d(A-T) ethidium bromide complex to estimate the unwinding angle of the double helix

A particular epitaxial Si1 −yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

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