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500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Journal of applied physics, 2022-11, Vol.132 (17)

2022

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Probing the infrared properties of a p-doped Ge0.938Sn0.062 thin film via polarization-dependent FTIR spectroscopy

Applied physics letters, 2024-02, Vol.124 (7)

2024

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Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Dark current in monolithic extended-SWIR GeSn PIN photodetectors

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Dark current in monolithic extended-SWIR GeSn PINphotodetectors

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering

Physical review applied, 2020-04, Vol.13 (4), Article 044062

2020

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Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays

Physical review applied, 2021-01, Vol.15 (1), Article 014034

2021

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Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge 1 − x Sn x Semiconductors

Physical review applied, 2021-02, Vol.15 (2), Article 024031

2021

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Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers

2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2022, p.51-52

2022

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Impacts of climate change on cereal farming in Tunisia: a panel ARDL–PMG approach

Environmental science and pollution research international, 2019-05, Vol.26 (13), p.13334-13345

2019

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Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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The Effect of Urbanization and Industrialization on Income Inequality: An Analysis Based on the Method of Moments Quantile Regression

Social indicators research, 2022-05, Vol.161 (1), p.29-50

2022

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The environmental impact of remittance inflows in developing countries: evidence from method of moments quantile regression

Environmental science and pollution research international, 2021-09, Vol.28 (35), p.48222-48235

2021

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Causality links among renewable energy consumption, CO2 emissions, and economic growth in Africa: evidence from a panel ARDL-PMG approach

Environmental science and pollution research international, 2017-05, Vol.24 (14), p.13036-13048

2017

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Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures

Nano letters, 2022-09, Vol.22 (17), p.7080-7086

2022

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Does asymmetric birch effect phenomenon matter for environmental sustainability of agriculture in Tunisia?

Environment, development and sustainability, 2023-05, Vol.25 (5), p.4237-4267

2023

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Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface

Advanced materials (Weinheim), 2023-07, Vol.35 (28), p.e2300595-n/a

2023

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High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

ACS photonics, 2022-04, Vol.9 (4), p.1425-1433

2022

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Indirect-to-direct band gap transition in relaxed and strained Ge{sub 1−x−y}Si{sub x}Sn{sub y} ternary alloys

Journal of applied physics, 2014-08, Vol.116 (6)

2014

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3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices

ACS applied materials & interfaces, 2020-01, Vol.12 (1), p.1728-1736

2020

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Optical Behavior of Group-IV Semiconductors in Relation to Atomic Interfacial Disorder, Quantum Confinement, and Fano Resonance

Attiaoui, Anis

2023

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All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors

Advanced functional materials, 2021-01, Vol.31 (3), p.n/a

2021

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Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface

Journal of physical chemistry. C, 2021-05, Vol.125 (17), p.9516-9525

2021

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Nuclear Spin‐Depleted, Isotopically Enriched 70 Ge/ 28 Si 70 Ge Quantum Wells

Advanced materials (Weinheim), 2023-12

2023

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Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Journal of applied physics, 2018-06, Vol.123 (22)

2018

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500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Probing the infrared properties of a p-doped Ge0.938Sn0.062 thin film via polarization-dependent FTIR spectroscopy

Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics

Dark current in monolithic extended-SWIR GeSn PIN photodetectors

Dark current in monolithic extended-SWIR GeSn PINphotodetectors

Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering

Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays

Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge 1 − x Sn x Semiconductors

Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers

Impacts of climate change on cereal farming in Tunisia: a panel ARDL–PMG approach

Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys

The Effect of Urbanization and Industrialization on Income Inequality: An Analysis Based on the Method of Moments Quantile Regression

The environmental impact of remittance inflows in developing countries: evidence from method of moments quantile regression

Causality links among renewable energy consumption, CO2 emissions, and economic growth in Africa: evidence from a panel ARDL-PMG approach

Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures

Does asymmetric birch effect phenomenon matter for environmental sustainability of agriculture in Tunisia?

Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Indirect-to-direct band gap transition in relaxed and strained Ge{sub 1−x−y}Si{sub x}Sn{sub y} ternary alloys

3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices

Optical Behavior of Group-IV Semiconductors in Relation to Atomic Interfacial Disorder, Quantum Confinement, and Fano Resonance

All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors

Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface

Nuclear Spin‐Depleted, Isotopically Enriched 70 Ge/ 28 Si 70 Ge Quantum Wells

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

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