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Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs

Microelectronics and reliability, 2007-06, Vol.47 (6), p.913-923

2007

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Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si

Thin solid films, 2011-01, Vol.519 (7), p.2262-2267

2011

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Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application

Microelectronics and reliability, 1999-08, Vol.39 (8), p.1185-1217

Atanassova, E

1999

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A comprehensive model for the I-V characteristics of metal-Ta2O5/SiO2-Si structures

Applied physics. A, Materials science & processing, 2006-06, Vol.83 (3), p.435-445

2006

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Constant current stress of Ti-doped Ta2O5 on nitrided Si

Journal of physics. D, Applied physics, 2009-01, Vol.42 (2), p.025105-025105 (8)

2009

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Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry

Applied surface science, 2012-03, Vol.258 (10), p.4507-4512

2012

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Nanomechanical properties of pure and doped Ta2O5 and the effect of microwave irradiation

Journal of physics. D, Applied physics, 2012-11, Vol.45 (47)

2012

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High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity

Microelectronic engineering, 2010-04, Vol.87 (4), p.668-676

2010

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Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale

Microelectronics and reliability, 2012-04, Vol.52 (4), p.642-650

2012

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X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si

Applied surface science, 1998-09, Vol.135 (1-4), p.71-82

1998

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Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity

Microelectronics and reliability, 2011-12, Vol.51 (12), p.2102-2109

2011

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Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack

Microelectronics and reliability, 2014-02, Vol.54 (2), p.381-387

2014

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Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

Applied surface science, 2009-08, Vol.255 (22), p.9211-9216

2009

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Electrical characteristics of Ti-doped Ta2O5 stacked capacitors

Thin solid films, 2008-10, Vol.516 (23), p.8684-8692

2008

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Evidence for a conduction through shallow traps in Hf-doped Ta2O5

Materials science in semiconductor processing, 2010-12, Vol.13 (5-6), p.349-355

2010

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Charge trapping at Pt/high- k dielectric (Ta 2O 5) interface

Physica. B, Condensed matter, 2011-09, Vol.406 (17), p.3348-3353

2011

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Electrical characteristics of Ta2O5 based capacitors with different gate electrodes

Applied physics. A, Materials science & processing, 2006, Vol.82 (1), p.55-62

2006

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Origin of the stress-induced leakage currents in Al–Ta2O5∕SiO2–Si structures

Applied physics letters, 2005-04, Vol.86 (15)

2005

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Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

Semiconductor science and technology, 2013-05, Vol.28 (5)

2013

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Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

Applied surface science, 2011-06, Vol.257 (17), p.7876-7880

2011

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Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si

Applied surface science, 2006-12, Vol.253 (5), p.2841-2851

2006

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Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks

Microelectronics and reliability, 2008-04, Vol.48 (4), p.514-525

2008

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Crystallization effects in oxygen annealed Ta2O5 thin films on Si

Thin solid films, 2001-01, Vol.381 (1), p.31-38

2001

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Impact of Si substrate nitridation on electrical characteristics of Ta2O5 stack capacitors

Journal of physics. D, Applied physics, 2007-11, Vol.40 (21), p.6709-6717

2007

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Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks

Microelectronics and reliability, 2010-06, Vol.50 (6), p.794-800

2010

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Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs

Charge trapping during constant current stress in Hf-doped Ta2O5 films sputtered on nitrided Si

Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application

A comprehensive model for the I-V characteristics of metal-Ta2O5/SiO2-Si structures

Constant current stress of Ti-doped Ta2O5 on nitrided Si

Interfacial layers in Ta2O5 based stacks and constituent depth profiles by spectroscopic ellipsometry

Nanomechanical properties of pure and doped Ta2O5 and the effect of microwave irradiation

High-k HfO2-Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity

Doped Ta2O5 and mixed HfO2–Ta2O5 films for dynamic memories applications at the nanoscale

X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si

Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity

Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack

Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

Electrical characteristics of Ti-doped Ta2O5 stacked capacitors

Evidence for a conduction through shallow traps in Hf-doped Ta2O5

Charge trapping at Pt/high- k dielectric (Ta 2O 5) interface

Electrical characteristics of Ta2O5 based capacitors with different gate electrodes

Origin of the stress-induced leakage currents in Al–Ta2O5∕SiO2–Si structures

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

Composition of Ta2O5 stacked films on N2O- and NH3-nitrided Si

Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks

Crystallization effects in oxygen annealed Ta2O5 thin films on Si

Impact of Si substrate nitridation on electrical characteristics of Ta2O5 stack capacitors

Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks

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