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Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Journal of applied physics, 1989-03, Vol.65 (6), p.2220-2237

1989

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Development and electrical properties of undoped polycrystalline silicon thin-film transistors

IEEE transactions on electron devices, 1989-09, Vol.36 (9), p.1915-1922

1989

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Structure and recombination in InGaAs/GaAs heterostructures

Journal of applied physics, 1988-02, Vol.63 (3), p.693-703

1988

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Amorphous-to-quasicrystalline transformation in the solid state

Physical review letters, 1985-10, Vol.55 (15), p.1587-1590

1985

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Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy

Journal of electronic materials, 2000-08, Vol.29 (8), p.L13-L17

2000

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Elimination of interface defects in mismatched epilayers by a reduction in growth area

Applied physics letters, 1988-05, Vol.52 (18), p.1496-1498

1988

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Texture studies of Si1−xGex thin films by x-ray diffraction and transmission electron microscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-03, Vol.19 (2), p.614-620

2001

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Effects of the presence/absence of HCl during gate oxidation on the electrical and structural properties of polycrystalline silicon thin-film transistors

Journal of applied physics, 1989-09, Vol.66 (5), p.2189-2199

1989

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The effect of substrates on the performance and hot-carrier reliability of n-channel thin film transistors

Semiconductor science and technology, 1998-05, Vol.13 (5), p.532-535

1998

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Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

Applied physics letters, 1993-03, Vol.62 (12), p.1417-1419

1993

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The effects of substrates on the characteristics of polycrystalline silicon thin film transistors

Solid-state electronics, 1998-09, Vol.42 (9), p.1689-1696

1998

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Etch rate and surface morphology of plasma etched glass and glass-ceramic substrates

Journal of non-crystalline solids, 2004-08, Vol.342 (1-3), p.110-115

2004

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Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

IEEE transactions on electron devices, 1991-08, Vol.38 (8), p.1781-1786

1991

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Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si1−xGex films

Journal of applied physics, 2002-07, Vol.92 (1), p.168-172

2002

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Non-lattice matched growth of InxGa1-xAs (0.53 < x < 0.80) on InP

Journal of crystal growth, 1993-02, Vol.127 (1-4), p.560-565

1993

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High accelerating voltage electron beam induced current (EBIC) of thick and thin solar silicon specimens

Solar energy materials and solar cells, 1993-09, Vol.30 (4), p.309-326

1993

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Dislocation structure, formation, and minority-carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors

Journal of applied physics, 1988-09, Vol.64 (5), p.2473-2487

1988

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Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases

Journal of applied physics, 1988-10, Vol.64 (8), p.4065-4074

1988

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Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy

Journal of electronic materials, 1995-11, Vol.24 (11), p.1611-1615

1995

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The identification of dark-line defects in AlGaAs/InGaAs/GaAs heterostructures

Journal of applied physics, 1988-05, Vol.63 (10), p.4925-4928

1988

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Fabrication and electrical activity of twist boundaries in silicon

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1991-09, Vol.64 (3), p.587-596

1991

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Preparation of amorphous composite materials

Journal of materials science, 1987, Vol.22 (1), p.23-26

1987

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The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates

Journal of applied physics, 1992-04, Vol.71 (7), p.3399-3407

1992

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Process-induced defects in solar cell silicon

Journal of applied physics, 1985-07, Vol.58 (1), p.223-229

1985

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Slip bands in metallic glasses

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1983-11, Vol.48 (5), p.811-824

1983

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Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

Development and electrical properties of undoped polycrystalline silicon thin-film transistors

Structure and recombination in InGaAs/GaAs heterostructures

Amorphous-to-quasicrystalline transformation in the solid state

Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy

Elimination of interface defects in mismatched epilayers by a reduction in growth area

Texture studies of Si1−xGex thin films by x-ray diffraction and transmission electron microscopy

Effects of the presence/absence of HCl during gate oxidation on the electrical and structural properties of polycrystalline silicon thin-film transistors

The effect of substrates on the performance and hot-carrier reliability of n-channel thin film transistors

Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

The effects of substrates on the characteristics of polycrystalline silicon thin film transistors

Etch rate and surface morphology of plasma etched glass and glass-ceramic substrates

Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

Resistivity and Hall voltage study of phosphorus segregation in polycrystalline Si1−xGex films

Non-lattice matched growth of InxGa1-xAs (0.53 < x < 0.80) on InP

High accelerating voltage electron beam induced current (EBIC) of thick and thin solar silicon specimens

Dislocation structure, formation, and minority-carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors

Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases

Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy

The identification of dark-line defects in AlGaAs/InGaAs/GaAs heterostructures

Fabrication and electrical activity of twist boundaries in silicon

Preparation of amorphous composite materials

The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates

Process-induced defects in solar cell silicon

Slip bands in metallic glasses

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