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Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

IEEE transactions on electron devices, 1997-03, Vol.44 (3), p.414-422

1997

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A 16 Gb/s/Link, 64 GB/s Bidirectional Asymmetric Memory Interface

IEEE journal of solid-state circuits, 2009-04, Vol.44 (4), p.1235-1247

2009

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A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

IEEE electron device letters, 1994-12, Vol.15 (12), p.510-512

1994

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Clocking and circuit design for a parallel I/O on a first-generation CELL processor

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005, 2005, p.526-615 Vol. 1

2005

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Versatile CMOS-MEMS integrated piezoelectric platform

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015, p.2248-2251

2015

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The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

IEEE electron device letters, 1992-11, Vol.13 (11), p.572-574

1992

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High field hole velocity and velocity overshoot in silicon inversion layers

IEEE electron device letters, 1997-02, Vol.18 (2), p.54-56

1997

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Transient pass-transistor leakage current in SOI MOSFET's

IEEE electron device letters, 1997-06, Vol.18 (6), p.241-243

1997

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A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator With Frequency Stability and Integrated Jitter

IEEE journal of solid-state circuits, 2013-01, Vol.48 (1), p.276-291

2013

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PD/SOI SRAM performance in presence of gate-to-body tunneling current

IEEE transactions on very large scale integration (VLSI) systems, 2003-12, Vol.11 (6), p.1106-1113

2003

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Observation of velocity overshoot in silicon inversion layers

IEEE electron device letters, 1993-10, Vol.14 (10), p.484-486

1993

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Simulation of SOI devices and circuits using BSIM3SOI

IEEE electron device letters, 1998-09, Vol.19 (9), p.323-325

1998

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Dynamic threshold body- and gate-coupled SOI ESD protection networks

Journal of electrostatics, 1998-09, Vol.44 (3), p.239-255

1998

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Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips

Journal of electrostatics, 2000-08, Vol.49 (3), p.151-168

2000

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DTMOS: its derivatives and variations, and their potential applications

ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453), 2000, p.9-10

Assaderaghi, F.

2000

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Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance

IEEE electron device letters, 1994-01, Vol.15 (1), p.22-24

1994

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Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry

Journal of electrostatics, 2002, Vol.54 (1), p.3-21

2002

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Velocity overshoot of electrons and holes in Si inversion layers

Solid-state electronics, 1997, Vol.41 (8), p.1119-1125

1997

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A temperature-to-digital converter for a MEMS-based programmable oscillator with better than ±0.5ppm frequency stability

2012 IEEE International Solid-State Circuits Conference, 2012, p.206-208

2012

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History dependence of non-fully depleted (NFD) digital SOI circuits

Digest of technical papers - Symposium on VLSI Technology, 1996, p.122-123

1996

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Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect

IEEE electron device letters, 1995-07, Vol.16 (7), p.333-335

1995

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CMOS-on-SOI ESD protection networks

Journal of electrostatics, 1998, Vol.42 (4), p.333-350

1998

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Theoretical determination of the temporal and spatial structure of alpha-particle induced electron-hole pair generation in silicon

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2575-2579

2000

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High-performance sub-quarter-micrometer PMOSFET's on SOI

IEEE electron device letters, 1993-06, Vol.14 (6), p.298-300

1993

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Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs

IEEE electron device letters, 1991-10, Vol.12 (10), p.518-520

1991

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Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

A 16 Gb/s/Link, 64 GB/s Bidirectional Asymmetric Memory Interface

A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

Clocking and circuit design for a parallel I/O on a first-generation CELL processor

Versatile CMOS-MEMS integrated piezoelectric platform

The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

High field hole velocity and velocity overshoot in silicon inversion layers

Transient pass-transistor leakage current in SOI MOSFET's

A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator With Frequency Stability and Integrated Jitter

PD/SOI SRAM performance in presence of gate-to-body tunneling current

Observation of velocity overshoot in silicon inversion layers

Simulation of SOI devices and circuits using BSIM3SOI

Dynamic threshold body- and gate-coupled SOI ESD protection networks

Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips

DTMOS: its derivatives and variations, and their potential applications

Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance

Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry

Velocity overshoot of electrons and holes in Si inversion layers

A temperature-to-digital converter for a MEMS-based programmable oscillator with better than ±0.5ppm frequency stability

History dependence of non-fully depleted (NFD) digital SOI circuits

Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect

CMOS-on-SOI ESD protection networks

Theoretical determination of the temporal and spatial structure of alpha-particle induced electron-hole pair generation in silicon

High-performance sub-quarter-micrometer PMOSFET's on SOI

Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs

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