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Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.115-121

2022

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Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide

Semiconductors (Woodbury, N.Y.), 2022-04, Vol.56 (4), p.246-252

2022

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Parasitic Recombination in a Laser with Asymmetric Barrier Layers

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.366-373

2020

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Analysis of Stability of Generation in Quantum Well Lasers

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.464-472

2024

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Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Journal of applied physics, 2018-10, Vol.124 (13)

2018

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Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser

Semiconductor science and technology, 1996-04, Vol.11 (4), p.554-567

1996

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Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures

Quantum electronics (Woodbury, N.Y.), 2005-12, Vol.35 (12), p.1117-1120

Asryan, L V

2005

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Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics

Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6), p.522-528

Asryan, L.V.

2019

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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

IEEE journal of quantum electronics, 2001-05, Vol.37 (5), p.676-683

2001

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Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser

Electronics letters, 2015-05, Vol.51 (10), p.780-782

2015

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Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

Semiconductors (Woodbury, N.Y.), 2017-07, Vol.51 (7), p.959-964

2017

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Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure

Journal of physics. Conference series, 2016-08, Vol.740 (1), p.12002

2016

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Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1362-1368

2016

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Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1621-1629

2018

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Theory of threshold characteristics of semiconductor quantum dot lasers

Semiconductors (Woodbury, N.Y.), 2004-01, Vol.38 (1), p.1-22

2004

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A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1905-1908

2018

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Temperature dependence of the threshold current density of a quantum dot laser

IEEE journal of quantum electronics, 1998-05, Vol.34 (5), p.841-850

1998

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Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

Quantum electronics (Woodbury, N.Y.), 2016-01, Vol.46 (9), p.777-781

2016

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Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Semiconductor science and technology, 2000-12, Vol.15 (12), p.1131-1140

2000

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Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12042

2015

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Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.254-259

2017

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Tunneling-injection quantum-dot laser: ultrahigh temperature stability

IEEE journal of quantum electronics, 2001-07, Vol.37 (7), p.905-910

2001

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Effect of the Wetting Layer on the Output Power of a Double Tunneling-Injection Quantum-Dot Laser

Journal of lightwave technology, 2009-12, Vol.27 (24), p.5775-5782

2009

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Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes

Quantum electronics (Woodbury, N.Y.), 2014-01, Vol.44 (9), p.801-805

2014

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Charge neutrality violation in quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.148-157

1997

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Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness

Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide

Parasitic Recombination in a Laser with Asymmetric Barrier Layers

Analysis of Stability of Generation in Quantum Well Lasers

Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser

Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures

Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser

Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers

Theory of threshold characteristics of semiconductor quantum dot lasers

A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

Temperature dependence of the threshold current density of a quantum dot laser

Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Tunneling-injection quantum-dot laser: ultrahigh temperature stability

Effect of the Wetting Layer on the Output Power of a Double Tunneling-Injection Quantum-Dot Laser

Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes

Charge neutrality violation in quantum-dot lasers

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