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Depth sensitive X‐ray diffraction as a probe of buried half‐metallic inclusions

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

Applied physics letters, 2013-12, Vol.103 (26)

2013

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In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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Optical absorption by dilute GaNSb alloys: Influence of N pair states

Applied physics letters, 2013-07, Vol.103 (4)

2013

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Molecular-beam epitaxy and lattice parameter of GaNxSb1−x: deviation from Vegard's law for x > 0.02

Journal of physics. D, Applied physics, 2013-07, Vol.46 (26)

2013

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Growth and properties of GaSbBi alloys

Applied physics letters, 2013-09, Vol.103 (14)

2013

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High Bi content GaSbBi alloys

Journal of applied physics, 2014-07, Vol.116 (4)

2014

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Bi-induced band gap reduction in epitaxial InSbBi alloys

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime

Journal of physics. D, Applied physics, 2014-09, Vol.47 (35)

2014

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Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys

Journal of physics. D, Applied physics, 2017-09, Vol.50 (37), p.375102

2017

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Bi flux-dependent MBE growth of GaSbBi alloys

Journal of crystal growth, 2015-09, Vol.425 (C), p.241-244

2015

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Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix

Journal of physics. D, Applied physics, 2017-07, Vol.50 (29)

2017

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Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys

Journal of physics. D, Applied physics, 2019-01, Vol.52 (4), p.45105

2019

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Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Journal of crystal growth, 2018-09, Vol.498, p.391-398

2018

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Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon

Physical review. B, Condensed matter, 1998-06, Vol.57 (24), p.R15048-R15051

1998

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A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface

Journal of crystal growth, 2017-02, Vol.459, p.118-123

2017

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Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots

Journal of crystal growth, 2005-05, Vol.278 (1), p.131-135

2005

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Morphological breakdown during growth of a high nitrogen content GaInNAs thin film

Surface science, 2006-08, Vol.600 (15), p.194-197

2006

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N incorporation in GaInNSb alloys and lattice matching to GaSb

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Surface morphology of InP thin films grown on InP(001) by solid source molecular beam epitaxy

Semiconductor science and technology, 2002-12, Vol.17 (12), p.1209-1212

2002

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Interplay of growing facets during self-assembled growth of GaAs on patterned substrates

Semiconductor science and technology, 2003-11, Vol.18 (11), p.950-954

2003

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Controlled nitrogen incorporation in GaNSb alloys

AIP advances, 2011-09, Vol.1 (3), p.032159-032159-6

2011

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Depth sensitive X‐ray diffraction as a probe of buried half‐metallic inclusions

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures

Optical absorption by dilute GaNSb alloys: Influence of N pair states

Molecular-beam epitaxy and lattice parameter of GaNxSb1−x: deviation from Vegard's law for x > 0.02

Growth and properties of GaSbBi alloys

High Bi content GaSbBi alloys

Bi-induced band gap reduction in epitaxial InSbBi alloys

Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime

Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys

Bi flux-dependent MBE growth of GaSbBi alloys

Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix

Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys

Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys

Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects

Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon

A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface

Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots

Morphological breakdown during growth of a high nitrogen content GaInNAs thin film

N incorporation in GaInNSb alloys and lattice matching to GaSb

Surface morphology of InP thin films grown on InP(001) by solid source molecular beam epitaxy

Interplay of growing facets during self-assembled growth of GaAs on patterned substrates

Controlled nitrogen incorporation in GaNSb alloys

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