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Analysis of the most common mistakes of candidates for a category “B” driving licence during the practical driving examination

AIP Conference Proceedings, 2023, Vol.2868 (1)

2023

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Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3063-3070

2006

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Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Nature (London), 2014-11, Vol.515 (7528), p.545-549

2014

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Assessment of the main characteristics of the operation of car parks in the areas of city centers

AIP Conference Proceedings, 2022, Vol.2557 (1)

2022

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Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2293-2301

2011

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Study of the spatio-temporal characteristics of the traffic on the international road artery passing through the settlement

AIP Conference Proceedings, 2024, Vol.3064 (1)

2024

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Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

IEEE electron device letters, 2012-03, Vol.33 (3), p.315-317

2012

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Severe Acute Myocarditis after the Third (Booster) Dose of mRNA COVID-19 Vaccination

Vaccines (Basel), 2022-04, Vol.10 (4), p.575

2022

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Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization

IEEE transactions on very large scale integration (VLSI) systems, 2022-04, Vol.30 (4), p.432-439

2022

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PREDICTION OF FINE PARTICULATE MATTER IN LOW-EMISSION ZONES USING A MODIFIED NUMERICAL METHOD FOR A SYSTEM OF ORDINARY DIFFERENTIAL EQUATIONS

Problemy Transportu, 2022-09, Vol.17 (3), p.213-226

2022

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How I do it: modified lichtenberger-brown tracheoesophageal puncture procedure

Journal of otolaryngology-head and neck surgery, 2022-06, Vol.51 (1), p.24-24

2022

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Simulation of Statistical Variability in Nano MOSFETs

2007 IEEE Symposium on VLSI Technology, 2007, p.86-87

Asenov, A.

2007

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Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1547-1554

2013

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Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2346-2352

2019

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Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs

IEEE transactions on electron devices, 2013-08, Vol.60 (8), p.2485-2492

2013

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4486-4491

2017

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Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2106-2112

2015

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Impact of NBTI/PBTI on SRAM Stability Degradation

IEEE electron device letters, 2011-06, Vol.32 (6), p.740-742

2011

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Simulation Study of Dominant Statistical Variability Sources in 32-nm High- \kappa/Metal Gate CMOS

IEEE electron device letters, 2012-05, Vol.33 (5), p.643-645

2012

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Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances-Part I: Pristine MWCNT

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4955-4962

2018

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METHODOLOGY FOR EXPERT EVALUATION OF MULTIMODAL CARGO TRANSPORTATION ROUTES

Transport Problems, 2021-01, Vol.16 (2), p.167-178

2021

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PLANNING AND MODELING OF THE TIME FOR ACCEPTANCE AND STAY OF VEHICLES AT THE LOADING AND DISCHARGING POINTS

Transport Problems, 2021-01, Vol.16 (4), p.23-34

2021

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Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2209-2217

2011

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Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Materials, 2019-01, Vol.12 (1), p.124

2019

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Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "Ab Initio" Ionized Impurity Scattering

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3251-3258

2008

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Analysis of the most common mistakes of candidates for a category “B” driving licence during the practical driving examination

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Assessment of the main characteristics of the operation of car parks in the areas of city centers

Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

Study of the spatio-temporal characteristics of the traffic on the international road artery passing through the settlement

Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

Severe Acute Myocarditis after the Third (Booster) Dose of mRNA COVID-19 Vaccination

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization

PREDICTION OF FINE PARTICULATE MATTER IN LOW-EMISSION ZONES USING A MODIFIED NUMERICAL METHOD FOR A SYSTEM OF ORDINARY DIFFERENTIAL EQUATIONS

How I do it: modified lichtenberger-brown tracheoesophageal puncture procedure

Simulation of Statistical Variability in Nano MOSFETs

Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs

Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

Impact of NBTI/PBTI on SRAM Stability Degradation

Simulation Study of Dominant Statistical Variability Sources in 32-nm High- \kappa/Metal Gate CMOS

Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances-Part I: Pristine MWCNT

METHODOLOGY FOR EXPERT EVALUATION OF MULTIMODAL CARGO TRANSPORTATION ROUTES

PLANNING AND MODELING OF THE TIME FOR ACCEPTANCE AND STAY OF VEHICLES AT THE LOADING AND DISCHARGING POINTS

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using "Ab Initio" Ionized Impurity Scattering

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