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Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs

IEEE electron device letters, 2019-01, Vol.40 (1), p.127-130

2019

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Power amplifiers and transmitters for RF and microwave

IEEE transactions on microwave theory and techniques, 2002-03, Vol.50 (3), p.814-826

2002

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Ultra-low resistance ohmic contacts in graphene field effect transistors

Applied physics letters, 2012-05, Vol.100 (20), p.203512-203512-3

2012

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Graphene FETs for Zero-Bias Linear Resistive FET Mixers

IEEE electron device letters, 2013-03, Vol.34 (3), p.465-467

2013

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Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

IEEE electron device letters, 2011-03, Vol.32 (3), p.270-272

2011

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Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

The Journal of chemical physics, 2014-09, Vol.141 (10), p.104702-104702

2014

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

IEEE electron device letters, 2010-04, Vol.31 (4), p.260-262

2010

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Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

IEEE electron device letters, 2012-10, Vol.33 (10), p.1357-1359

2012

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Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz

IEEE electron device letters, 2011-08, Vol.32 (8), p.1074-1076

2011

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Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN

Applied surface science, 2014-10, Vol.317, p.1022-1027

2014

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Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications

IEEE transactions on microwave theory and techniques, 2005-04, Vol.53 (4), p.1244-1255

2005

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An extended Doherty amplifier with high efficiency over a wide power range

IEEE transactions on microwave theory and techniques, 2001-12, Vol.49 (12), p.2472-2479

2001

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Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

IEEE electron device letters, 2018, p.1-1

2018

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High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1471-1476

1999

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Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers

IEEE transactions on microwave theory and techniques, 2013-04, Vol.61 (4), p.1543-1556

2013

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Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Applied physics letters, 1997-11, Vol.71 (19), p.2794-2796

1997

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An intelligently controlled RF power amplifier with a reconfigurable MEMS-varactor tuner

IEEE transactions on microwave theory and techniques, 2005-03, Vol.53 (3), p.1089-1095

2005

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High transconductance ion-implanted GaN MISFETs using atomic layer deposited high-k dielectrics

Physica status solidi. C, 2013-05, Vol.10 (5), p.820-823

2013

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A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications

IEEE transactions on microwave theory and techniques, 2005-02, Vol.53 (2), p.529-537

2005

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Current-mode class-D power amplifiers for high-efficiency RF applications

IEEE transactions on microwave theory and techniques, 2001-12, Vol.49 (12), p.2480-2485

2001

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Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

Journal of computational electronics, 2009-06, Vol.8 (2), p.60-77

2009

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Optimisation of microwave absorption of carbon nanotube composites through use of carboxyl-epoxide functional group linkages

Electronics letters, 2012-05, Vol.48 (11), p.638-639

2012

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Open-Loop Digital Predistorter for RF Power Amplifiers Using Dynamic Deviation Reduction-Based Volterra Series

IEEE transactions on microwave theory and techniques, 2008-07, Vol.56 (7), p.1524-1534

2008

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A 25 dBm Digitally Modulated CMOS Power Amplifier for WCDMA/EDGE/OFDM With Adaptive Digital Predistortion and Efficient Power Control

IEEE journal of solid-state circuits, 2009-07, Vol.44 (7), p.1883-1896

2009

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Digital Predistortion for Envelope-Tracking Power Amplifiers Using Decomposed Piecewise Volterra Series

IEEE transactions on microwave theory and techniques, 2008-10, Vol.56 (10), p.2237-2247

2008

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Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs

Power amplifiers and transmitters for RF and microwave

Ultra-low resistance ohmic contacts in graphene field effect transistors

Graphene FETs for Zero-Bias Linear Resistive FET Mixers

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz

Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN

Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications

An extended Doherty amplifier with high efficiency over a wide power range

Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications

Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

An intelligently controlled RF power amplifier with a reconfigurable MEMS-varactor tuner

High transconductance ion-implanted GaN MISFETs using atomic layer deposited high-k dielectrics

A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications

Current-mode class-D power amplifiers for high-efficiency RF applications

Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

Optimisation of microwave absorption of carbon nanotube composites through use of carboxyl-epoxide functional group linkages

Open-Loop Digital Predistorter for RF Power Amplifiers Using Dynamic Deviation Reduction-Based Volterra Series

A 25 dBm Digitally Modulated CMOS Power Amplifier for WCDMA/EDGE/OFDM With Adaptive Digital Predistortion and Efficient Power Control

Digital Predistortion for Envelope-Tracking Power Amplifiers Using Decomposed Piecewise Volterra Series

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