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A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3147-3155

2011

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IEEE_Xplore

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.1980-1990

2009

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IEEE_Xplore

Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1211-1219

2008

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IEEE_Xplore

Reliability Comparison of ISSG Oxide and HTO as Tunnel Dielectric in 3-D-SONOS Applications

IEEE electron device letters, 2013-05, Vol.34 (5), p.620-622

2013

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IEEE_Xplore

Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.554-559

2024

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Impact of Mechanical Stress on 3-D NAND Flash Current Conduction

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4891-4896

2020

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IEEE_Xplore

Electrolithic Memory: A New Device for Ultrahigh-Density Data Storage

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2377-2383

2022

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IEEE_Xplore

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices with SiON Tunneling Oxide

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

Link zum Volltext
IEEE_Xplore

Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.314-320

2022

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IEEE_Xplore

Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.529-534

2021

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IEEE_Xplore

Comprehensive understanding of charge lateral migration in 3D SONOS memories

Solid-state electronics, 2016-02, Vol.116, p.95-99

2016

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Impact of Charge Trapping Layer Thickness and New Trade-Off in Performance Characteristics of 3-D SONOS Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.632-634

2013

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IEEE_Xplore

TID Radiation Response of 3-D Vertical GAA SONOS Memory Cells

IEEE transactions on nuclear science, 2014-04, Vol.61 (2), p.955-960

2014

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IEEE_Xplore

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1697-1701

2014

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Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

Applied physics letters, 2012-07, Vol.101 (5), p.53505

2012

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First-principles study of oxygen and aluminum defects in β-Si3N4: Compensation and charge trapping

Computational materials science, 2014-01, Vol.81, p.178-183

2014

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Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

IEEE electron device letters, 2010-09, Vol.31 (9), p.936-938

2010

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IEEE_Xplore

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Solid-state electronics, 2010-11, Vol.54 (11), p.1384-1391

2010

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Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications

Microelectronic engineering, 2009-10, Vol.86 (10), p.1999-2004

2009

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Analysis of nitride storage non-volatile memories with HfSiO x blocking dielectric and TiN metal gate for low power embedded applications

Microelectronic engineering, 2009, Vol.86 (10), p.1999-2004

2009

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A proper approach to characterize retention-after-cycling in 3D-Flash devices

2013 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2013, p.187-191

2013

Link zum Volltext
IEEE_Xplore

Analysis of nitride storage non-volatile memories with HfSiOx blocking dielectric and TiN metal gate for low power embedded applications

Microelectronic engineering, 2009-10, Vol.86 (10), p.1999-2004

2009

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Improvement of conduction in 3-D NAND memory devices by channel and junction optimization

2019 IEEE 11th International Memory Workshop (IMW), 2019, p.1-4

2019

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IEEE_Xplore

Role of holes and electrons during erase of TANOS memories: Evidences for dipole formation and its impact on reliability

2010 IEEE International Reliability Physics Symposium, 2010, p.731-737

2010

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IEEE_Xplore

In Depth Analysis of Post-Program VT Instability after Electrical Stress in 3D SONOS Memories

2016 IEEE 8th International Memory Workshop (IMW), 2016, p.1-4

2016

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A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells

Reliability Comparison of ISSG Oxide and HTO as Tunnel Dielectric in 3-D-SONOS Applications

Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model

Impact of Mechanical Stress on 3-D NAND Flash Current Conduction

Electrolithic Memory: A New Device for Ultrahigh-Density Data Storage

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices with SiON Tunneling Oxide

Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM

Comprehensive understanding of charge lateral migration in 3D SONOS memories

Impact of Charge Trapping Layer Thickness and New Trade-Off in Performance Characteristics of 3-D SONOS Devices

TID Radiation Response of 3-D Vertical GAA SONOS Memory Cells

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories

Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

First-principles study of oxygen and aluminum defects in β-Si3N4: Compensation and charge trapping

Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications

Analysis of nitride storage non-volatile memories with HfSiO x blocking dielectric and TiN metal gate for low power embedded applications

A proper approach to characterize retention-after-cycling in 3D-Flash devices

Analysis of nitride storage non-volatile memories with HfSiOx blocking dielectric and TiN metal gate for low power embedded applications

Improvement of conduction in 3-D NAND memory devices by channel and junction optimization

Role of holes and electrons during erase of TANOS memories: Evidences for dipole formation and its impact on reliability

In Depth Analysis of Post-Program VT Instability after Electrical Stress in 3D SONOS Memories

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