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Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe2

Science (American Association for the Advancement of Science), 2021-02, Vol.371 (6530), p.722-727

2021

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Realization of Both n- and p‑Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe2 Alloying

Journal of the American Chemical Society, 2019-12, Vol.141 (49), p.19505-19512

2019

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Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

Angewandte Chemie International Edition, 2021-04, Vol.60 (18), p.10350-10358

International ed. in English, 2021

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Metavalent or Hypervalent Bonding: Is There a Chance for Reconciliation?

Advanced science, 2024-02, Vol.11 (6), p.e2308578-n/a

2024

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Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe2: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Angewandte Chemie International Edition, 2018-11, Vol.57 (46), p.15167-15171

International ed. in English, 2018

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Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn 1−x Ge x Te

Energy & environmental science, 2019-02, Vol.12 (2), p.589-595

2019

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Metavalent Bonding-Mediated Dual 6s2 Lone Pair Expression Leads to Intrinsic Lattice Shearing in n‑Type TlBiSe2

Journal of the American Chemical Society, 2023-04, Vol.145 (16), p.9292-9303

2023

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Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn1−xGexTe (We dedicate this communication to Prof. C. N. R. Rao on the occasion of his 85th birthday.)

Energy & environmental science, 2019-02, Vol.12 (2), p.589-595

2019

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Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides

Advanced materials (Weinheim), 2023-02, Vol.35 (7), p.e2208724-n/a

2023

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Ferroelectric Instability Induced Ultralow Thermal Conductivity and High Thermoelectric Performance in Rhombohedral p‑Type GeSe Crystal

Journal of the American Chemical Society, 2020-07, Vol.142 (28), p.12237-12244

2020

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Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms

Angewandte Chemie International Edition, 2024-01, Vol.63 (1), p.e202313852-n/a

International ed. in English, 2024

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Modulation of the electronic structure and thermoelectric properties of orthorhombic and cubic SnSe by AgBiSe2 alloying

Chemical science (Cambridge), 2021-10, Vol.12 (39), p.13074-13082

2021

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Modulation of the electronic structure and thermoelectric properties of orthorhombic and cubic SnSe by AgBiSe 2 alloying

Chemical science (Cambridge), 2021-10, Vol.12 (39), p.13074-13082

2021

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Metavalent Bonding-Mediated Dual 6s 2 Lone Pair Expression Leads to Intrinsic Lattice Shearing in n-Type TlBiSe 2

Journal of the American Chemical Society, 2023-04, Vol.145 (16), p.9292-9303

2023

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Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe2

Journal of the American Chemical Society, 2023-11, Vol.145 (46), p.25392-25400

2023

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Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe 2

Journal of the American Chemical Society, 2023-11, Vol.145 (46), p.25392-25400

2023

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Realization of Both n- and p-Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe 2 Alloying

Journal of the American Chemical Society, 2019-12, Vol.141 (49), p.19505-19512

2019

Volltextzugriff (PDF)

Stabilizing n-Type Cubic GeSe by Entropy-Driven Alloying of AgBiSe 2 : Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Angewandte Chemie International Edition, 2018-11, Vol.57 (46), p.15167-15171

2018

Volltextzugriff (PDF)

Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe 2

Science (American Association for the Advancement of Science), 2021-02, Vol.371 (6530), p.722-727

2021

Volltextzugriff (PDF)

Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms

Angewandte Chemie, 2024-01, Vol.136 (1), p.n/a

2024

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Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn1−xGexTeWe dedicate this communication to Prof. C. N. R. Rao on the occasion of his 85th birthday.Electronic supplementary information (ESI) available: Detailed methods, additional structural characterizations using XRD, X-ray PDF, FESEM, TEM, additional electrical and thermal transport data, electronic absorption spectra and phonon DOS. See DOI: 10.1039/c8ee03162b

2019-02

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Pressure-induced topological crystalline insulating phase in TlBiSe 2 : Experiments and theory

Physical review. B, 2023-05, Vol.107 (20), Article 205139

2023

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Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies

Physical review. B, 2020-04, Vol.101 (15), p.1, Article 155202

2020

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Pressure-induced topological and structural phase transitions in natural van der Waals heterostructures from the ( SnTe ) m ( Bi 2 Te 3 ) n homologous family: Raman spectroscopy, x-ray diffraction, and density functional theory

Physical review. B, 2022-10, Vol.106 (13), Article 134104

2022

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Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

Angewandte Chemie, 2021-04, Vol.133 (18), p.10438-10446

2021

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Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe2

Realization of Both n- and p‑Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe2 Alloying

Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

Metavalent or Hypervalent Bonding: Is There a Chance for Reconciliation?

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe2: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn 1−x Ge x Te

Metavalent Bonding-Mediated Dual 6s2 Lone Pair Expression Leads to Intrinsic Lattice Shearing in n‑Type TlBiSe2

Engineering ferroelectric instability to achieve ultralow thermal conductivity and high thermoelectric performance in Sn1−xGexTe (We dedicate this communication to Prof. C. N. R. Rao on the occasion of his 85th birthday.)

Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides

Ferroelectric Instability Induced Ultralow Thermal Conductivity and High Thermoelectric Performance in Rhombohedral p‑Type GeSe Crystal

Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms

Modulation of the electronic structure and thermoelectric properties of orthorhombic and cubic SnSe by AgBiSe2 alloying

Modulation of the electronic structure and thermoelectric properties of orthorhombic and cubic SnSe by AgBiSe 2 alloying

Metavalent Bonding-Mediated Dual 6s 2 Lone Pair Expression Leads to Intrinsic Lattice Shearing in n-Type TlBiSe 2

Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe2

Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe 2

Realization of Both n- and p-Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe 2 Alloying

Stabilizing n-Type Cubic GeSe by Entropy-Driven Alloying of AgBiSe 2 : Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe 2

Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms

Pressure-induced topological crystalline insulating phase in TlBiSe 2 : Experiments and theory

Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies

Pressure-induced topological and structural phase transitions in natural van der Waals heterostructures from the ( SnTe ) m ( Bi 2 Te 3 ) n homologous family: Raman spectroscopy, x-ray diffraction, and density functional theory

Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

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