UB Paderborn / Katalog / Suche / in CDI

Analysis and mitigation of errors in external quantum efficiency measurement of solar cells embedded in solar modules

Solar energy, 2023-07, Vol.258, p.319-324

2023

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High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

IEEE journal of quantum electronics, 2005-06, Vol.41 (6), p.872-878

2005

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Exploring the Challenges in the External Quantum Efficiency Measurement of Solar Cells in a PID Affected Module Using PSpice Simulations

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 2021, p.2412-2414

2021

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Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-10, Vol.268 (19), p.3001-3004

2010

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Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide

Solid state communications, 2008-06, Vol.146 (9), p.361-364

2008

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Investigation of AuGeNi contacts using rectangular and circular transmission line model

Solid-state electronics, 1992-10, Vol.35 (10), p.1441-1445

1992

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Microstructure of InN epilayers deposited in a close-coupled showerhead reactor

Journal of crystal growth, 2008-11, Vol.310 (23), p.4942-4946

2008

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Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

Journal of crystal growth, 2007, Vol.298, p.403-408

2007

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Photoluminescence study of GaAs implanted with 100MeV 28Si ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-06, Vol.247 (2), p.238-243

2006

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Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

Journal of crystal growth, 2008-11, Vol.310 (23), p.4747-4750

2008

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Studies on the structure and electrical characteristics of oxide layers synthesized by reactive ion implantation into tantalum

Surface & coatings technology, 2009-06, Vol.203 (17), p.2632-2636

2009

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Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots

Journal of crystal growth, 2007, Vol.298, p.586-590

2007

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High-resolution XRD analysis of swift heavy ion irradiated InGaAs/GaAs heterostructures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-03, Vol.256 (1), p.260-265

2007

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Structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-04, Vol.266 (8), p.1908-1911

2008

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Ion beam modification studies of InP based multi quantum wells

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-04, Vol.266 (8), p.1810-1815

2008

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Growth of strained ZnSe layers on GaAs substrates by pulsed laser deposition carried out in an off-axis deposition geometry

Thin solid films, 2007-07, Vol.515 (20), p.7834-7842

2007

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Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

Optics and laser technology, 2007-10, Vol.39 (7), p.1395-1399

2007

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Ion beam modification of strained InGaAs/InP characterized by HRXRD, PL and AFM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-08, Vol.266 (16), p.3552-3556

2008

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Wavelength modulation spectroscopy using novel mechanical light chopper blade designs

Review of scientific instruments, 2005-08, Vol.76 (8), p.083903-083903-6

2005

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Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-02, Vol.266 (4), p.583-588

2008

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The effects of macroscopic inhomogeneities on the magnetotransport properties of the electron gas in two dimensions

Physica. E, Low-dimensional systems & nanostructures, 2004-09, Vol.24 (3-4), p.187-210

2004

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Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm

Optics and laser technology, 2007-10, Vol.39 (7), p.1395-1399

2007

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Growth of InSb epitaxial layers on GaAs (0 0 1) substrates by LPE and their characterizations

Journal of crystal growth, 2002-02, Vol.235 (1), p.154-160

2002

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Distribution of radiation induced defects and modification of optical constants of GaAs implanted with high energy 56Fe ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-11, Vol.226 (3), p.301-308

2004

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Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers

Journal of applied physics, 2002-05, Vol.91 (9), p.5875-5881

2002

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Analysis and mitigation of errors in external quantum efficiency measurement of solar cells embedded in solar modules

High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

Exploring the Challenges in the External Quantum Efficiency Measurement of Solar Cells in a PID Affected Module Using PSpice Simulations

Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells

Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide

Investigation of AuGeNi contacts using rectangular and circular transmission line model

Microstructure of InN epilayers deposited in a close-coupled showerhead reactor

Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

Photoluminescence study of GaAs implanted with 100MeV 28Si ions

Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

Studies on the structure and electrical characteristics of oxide layers synthesized by reactive ion implantation into tantalum

Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots

High-resolution XRD analysis of swift heavy ion irradiated InGaAs/GaAs heterostructures

Structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells

Ion beam modification studies of InP based multi quantum wells

Growth of strained ZnSe layers on GaAs substrates by pulsed laser deposition carried out in an off-axis deposition geometry

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

Ion beam modification of strained InGaAs/InP characterized by HRXRD, PL and AFM

Wavelength modulation spectroscopy using novel mechanical light chopper blade designs

Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications

The effects of macroscopic inhomogeneities on the magnetotransport properties of the electron gas in two dimensions

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm

Growth of InSb epitaxial layers on GaAs (0 0 1) substrates by LPE and their characterizations

Distribution of radiation induced defects and modification of optical constants of GaAs implanted with high energy 56Fe ions

Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers

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