UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Silicon‐on‐lnsulator Devices for High Voltage and Power IC Applications

Journal of the Electrochemical Society, 1994-07, Vol.141 (7), p.1983-1988

Arnold, Emil

1994

Volltextzugriff (PDF)

Effect of interface states on electron transport in 4H-SiC inversion layers

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1870-1877

2001

Volltextzugriff (PDF)

Charge-sheet model for silicon carbide inversion layers

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.497-503

Arnold, E.

1999

Volltextzugriff (PDF)

Faceting at the silicon (100) crystal-melt interface: theory and experiment

Physical review letters, 1986-01, Vol.56 (2), p.155-158

1986

Volltextzugriff (PDF)

Disorder-induced carrier localization in silicon surface inversion layers

Applied physics letters, 1974-12, Vol.25 (12), p.705-707

Arnold, Emil

1974

Volltextzugriff (PDF)

Conduction mechanisms in bandtails at the SiSiO2 interface

Surface science, 1976-08, Vol.58 (1), p.60-70

Arnold, Emil

1976

Volltextzugriff (PDF)

Electrical conductivity of semi-insulating polycrystalline silicon and its dependence upon oxygen content

Applied physics letters, 1981-10, Vol.39 (7), p.554-556

1981

Volltextzugriff (PDF)

Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers

Surface science, 1982, Vol.113 (1), p.239-243

Arnold, Emil

1982

Volltextzugriff (PDF)

Double-charge-sheet model for thin silicon-on-insulator films

IEEE transactions on electron devices, 1996-12, Vol.43 (12), p.2153-2163

Arnold, E.

1996

Volltextzugriff (PDF)

Studies of lattice distortion and crystal curvature in arsenic-implanted silicon

Journal of applied physics, 1988-08, Vol.64 (4), p.1791-1794

1988

Volltextzugriff (PDF)

Simple technique for charge centroid measurement in MNOS capacitors

Journal of applied physics, 1979-11, Vol.50 (11), p.6956-6961

1979

Volltextzugriff (PDF)

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

Materials science forum, 2000-05, Vol.338-342, p.1077-1080

2000

Volltextzugriff (PDF)

High-field electron velocity in silicon surface-accumulation layers

IEEE electron device letters, 1999-09, Vol.20 (9), p.490-492

1999

Volltextzugriff (PDF)

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes

Materials science forum, 1998-01, Vol.264-268, p.929-932

1998

Volltextzugriff (PDF)

EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

Applied physics letters, 1966-11, Vol.9 (9), p.344-346

1966

Volltextzugriff (PDF)

High-temperature off-state characteristics of thin-SOI power devices

IEEE electron device letters, 1996-12, Vol.17 (12), p.557-559

1996

Volltextzugriff (PDF)

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

Materials science forum, 2002-04, Vol.389-393, p.1041-1044

2002

Volltextzugriff (PDF)

CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON

Applied physics letters, 1968-12, Vol.13 (12), p.413-416

1968

Volltextzugriff (PDF)

Sorgen der westlichen Bruderparteien

Ost-Probleme (Berlin, West), 1956-09, Vol.8 (39), p.1344-1347

Arnold, Emil

1956

Volltextzugriff (PDF)

Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors

Materials science forum, 1998-01, Vol.264-268, p.1013-1016

1998

Volltextzugriff (PDF)

Conduction mechanisms in bandtails at the SiSiO 2 interface

Surface science, 1976, Vol.58 (1), p.60-70

Arnold, Emil

1976

Volltextzugriff (PDF)

STRATEGIES FOR FOSTERING DIVERGENT THINKING ABILITIES IN PROSPECTIVE TEACHERS

BURKART, ARNOLD EMIL

1973

Volltextzugriff (PDF)

Bearbeitung des p-Nitranilins auf Trijod- und Tetrajod-Benzole, auf das Pentajodbenzol, sowie auf alle zu diesen Verbindungen führenden Zwischenproducte

Berichte der deutschen chemischen Gesellschaft, 1901-10, Vol.34 (3), p.3343-3354

1901

Volltextzugriff (PDF)

Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers

Surface science letters, 1982, Vol.113 (1), p.A18-A18

Arnold, Emil

1982

Volltextzugriff (PDF)

Comment on the frequency dependence of electron conductivity in the silicon inversion layer in the metallic and localized regimes

Physical review. B, Condensed matter, 1978-05, Vol.17 (10), p.4111-4113

Arnold, Emil

1978

Volltextzugriff (PDF)

1 – 25 von 115

Menü

Weitere Dienste

Einstellungen

Silicon‐on‐lnsulator Devices for High Voltage and Power IC Applications

Effect of interface states on electron transport in 4H-SiC inversion layers

Charge-sheet model for silicon carbide inversion layers

Faceting at the silicon (100) crystal-melt interface: theory and experiment

Disorder-induced carrier localization in silicon surface inversion layers

Conduction mechanisms in bandtails at the SiSiO2 interface

Electrical conductivity of semi-insulating polycrystalline silicon and its dependence upon oxygen content

Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers

Double-charge-sheet model for thin silicon-on-insulator films

Studies of lattice distortion and crystal curvature in arsenic-implanted silicon

Simple technique for charge centroid measurement in MNOS capacitors

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

High-field electron velocity in silicon surface-accumulation layers

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes

EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

High-temperature off-state characteristics of thin-SOI power devices

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON

Sorgen der westlichen Bruderparteien

Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors

Conduction mechanisms in bandtails at the SiSiO 2 interface

STRATEGIES FOR FOSTERING DIVERGENT THINKING ABILITIES IN PROSPECTIVE TEACHERS

Bearbeitung des p-Nitranilins auf Trijod- und Tetrajod-Benzole, auf das Pentajodbenzol, sowie auf alle zu diesen Verbindungen führenden Zwischenproducte

Computer simulation of conductivity and Hall effect in inhomogeneous inversion layers

Comment on the frequency dependence of electron conductivity in the silicon inversion layer in the metallic and localized regimes

Suchergebnisse filtern