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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Ultra-wide band gap AlGaN polarization-doped field effect transistor

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.74103

2018

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.473-477

2019

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD04

2019

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Journal of applied physics, 2016-03, Vol.119 (10)

2016

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Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Applied physics letters, 2023-09, Vol.123 (11)

2023

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Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

IEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.318-323

2021

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Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

ACS applied materials & interfaces, 2021-11, Vol.13 (44), p.53220-53226

2021

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Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

Journal of applied physics, 2020-11, Vol.128 (18)

2020

Volltextzugriff (PDF)

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Applied physics letters, 2018-02, Vol.112 (7)

2018

Volltextzugriff (PDF)

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

Volltextzugriff (PDF)

Independent Association Between Obstructive Sleep Apnea and Noncalcified Coronary Plaque Demonstrated by Noninvasive Coronary Computed Tomography Angiography

Clinical cardiology (Mahwah, N.J.), 2012-10, Vol.35 (10), p.641-645

2012

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Al-rich AlGaN based transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

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Vertical GaN Power Diodes With a Bilayer Edge Termination

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.419-425

2016

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Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

Applied physics letters, 2017-07, Vol.111 (4)

2017

Volltextzugriff (PDF)

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Applied physics letters, 2019-10, Vol.115 (15)

2019

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High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Applied physics letters, 2021-07, Vol.119 (1)

2021

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1 – 25 von 1.175

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes

Independent Association Between Obstructive Sleep Apnea and Noncalcified Coronary Plaque Demonstrated by Noninvasive Coronary Computed Tomography Angiography

Al-rich AlGaN based transistors

Vertical GaN Power Diodes With a Bilayer Edge Termination

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

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