UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 1.160

Sortiert nach

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

Link zum Volltext

Verfügbarkeit prüfen

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Applied physics letters, 2017-07, Vol.111 (5)

2017

Link zum Volltext

Verfügbarkeit prüfen

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Applied physics letters, 2016-11, Vol.109 (22)

2016

Link zum Volltext

Verfügbarkeit prüfen

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Applied physics letters, 2017-05, Vol.110 (20)

2017

Link zum Volltext

Verfügbarkeit prüfen

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Applied physics letters, 2016-09, Vol.109 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

Link zum Volltext

Verfügbarkeit prüfen

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Applied physics letters, 2016-11, Vol.109 (19)

2016

Link zum Volltext

Verfügbarkeit prüfen

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Journal of applied physics, 2015-05, Vol.117 (18)

2015

Link zum Volltext

Verfügbarkeit prüfen

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.74103

2018

Link zum Volltext

Verfügbarkeit prüfen

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.473-477

2019

Link zum Volltext
IEEE_Xplore

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD04

2019

Link zum Volltext

Verfügbarkeit prüfen

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

Link zum Volltext

Verfügbarkeit prüfen

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Journal of applied physics, 2016-03, Vol.119 (10)

2016

Link zum Volltext

Verfügbarkeit prüfen

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Applied physics letters, 2023-09, Vol.123 (11)

2023

Link zum Volltext

Verfügbarkeit prüfen

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

IEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.318-323

2021

Link zum Volltext

Verfügbarkeit prüfen

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

ACS applied materials & interfaces, 2021-11, Vol.13 (44), p.53220-53226

2021

Link zum Volltext

Verfügbarkeit prüfen

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

Journal of applied physics, 2020-11, Vol.128 (18)

2020

Link zum Volltext

Verfügbarkeit prüfen

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Applied physics letters, 2018-02, Vol.112 (7)

2018

Link zum Volltext

Verfügbarkeit prüfen

Independent Association Between Obstructive Sleep Apnea and Noncalcified Coronary Plaque Demonstrated by Noninvasive Coronary Computed Tomography Angiography

Clinical cardiology (Mahwah, N.J.), 2012-10, Vol.35 (10), p.641-645

2012

Link zum Volltext

Verfügbarkeit prüfen

Al-rich AlGaN based transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

Link zum Volltext

Verfügbarkeit prüfen

Vertical GaN Power Diodes With a Bilayer Edge Termination

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.419-425

2016

Link zum Volltext
IEEE_Xplore

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

Applied physics letters, 2017-07, Vol.111 (4)

2017

Link zum Volltext

Verfügbarkeit prüfen

High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Applied physics letters, 2021-07, Vol.119 (1)

2021

Link zum Volltext

Verfügbarkeit prüfen

Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4278-4282

2021

Link zum Volltext
IEEE_Xplore

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Applied physics letters, 2019-10, Vol.115 (15)

2019

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 1.160

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(1.100)
Mit Volltextzugriff
(1.022)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Journal Of Clinical Oncology
(65)
Applied Physics Letters
(28)
Diabetes Care
(20)
Clinical Cancer Research
(17)
Blood
(16)
Science
(16)
The New England Journal Of Medicine
(16)
Journal Of Applied Physics
(15)
Journal Of The American Podiatric Medical Association
(12)
The Lancet Oncology
(12)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

An AlN/Al0.85Ga0.15N high electron mobility transistor

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Independent Association Between Obstructive Sleep Apnea and Noncalcified Coronary Plaque Demonstrated by Noninvasive Coronary Computed Tomography Angiography

Al-rich AlGaN based transistors

Vertical GaN Power Diodes With a Bilayer Edge Termination

Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity

High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Suchergebnisse filtern