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Dynamic behaviour of dry and water-saturated sand under planar shock conditions

International journal of impact engineering, 2010-01, Vol.37 (1), p.1-10

2010

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Polarity determination of GaN films by ion channeling and convergent beam electron diffraction

Applied physics letters, 1996-10, Vol.69 (17), p.2480-2482

1996

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Residual bearing capacity of reinforced concrete columns after close-in detonations: Experimental and numerical

International journal of safety and security engineering, 2019-01, Vol.9 (1), p.38

2019

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Residual bearing capacity of reinforced concrete columns after close-in detonations: experimental and numerical investigations

International journal of safety and security engineering, 2019-01, Vol.9 (1), p.38-49

2019

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Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

Applied physics letters, 1999-05, Vol.74 (22), p.3287-3289

1999

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Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.161-166

1997

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Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.61-71

1997

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Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

Physical review. B, Condensed matter, 1997-09, Vol.56 (12), p.R7069-R7072

1997

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Dynamic behaviour of dry and water-satured sand under planar shock conditions

International journal of impact engineering, 2010, Vol.37 (1), p.1-10

2010

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The key role of polarity in the growth process of (0001) nitrides

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.157-160

1997

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2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.8-11

1997

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Comparative study of hexagonal and cubic GaN growth by RF-MBE

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.233-237

1997

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Understanding the Pyramidal Growth of GaN

MRS proceedings, 1996, Vol.395, Article 393

1996

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On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN

Materials science forum, 1997-01, Vol.258-263, p.1149-1154

1997

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Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy

Journal of crystal growth, 1998-06, Vol.189-190, p.142-146

1998

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Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e33

1996

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Epitaxial growth of cubic GaN and AlN on Si(001)

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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Epitaxial growth of cubic GaN and AlN on Si(001)

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e21

1996

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Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy

Journal of crystal growth, 1998, Vol.189-90, p.142-146

1998

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Evidence of 2D-3D transition during the first stages of GaN growth on AlN

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e20

1997

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Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire

MRS proceedings, 1996, Vol.449, Article 769

1996

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Evidence of 2D-3D transition during the first stages of GaN growth on AlN

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

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Structural and optical properties of self-assembled GaN/AlN quantum dots

Comptes rendus de l'Académie des sciences. Série IV, Physique, astrophysique, 2000-03, Vol.1 (1), p.61-69

2000

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A Note on Climatological Normals

Zeitschrift für Meteorologie Band 21, Heft 1-2, 2022, Vol.21, Heft 1-2, p.60-61

2022

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Dynamic behaviour of dry and water-saturated sand under planar shock conditions

Polarity determination of GaN films by ion channeling and convergent beam electron diffraction

Residual bearing capacity of reinforced concrete columns after close-in detonations: Experimental and numerical

Residual bearing capacity of reinforced concrete columns after close-in detonations: experimental and numerical investigations

Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

Dynamic behaviour of dry and water-satured sand under planar shock conditions

The key role of polarity in the growth process of (0001) nitrides

2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots

Comparative study of hexagonal and cubic GaN growth by RF-MBE

Understanding the Pyramidal Growth of GaN

On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN

Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy

Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire

Epitaxial growth of cubic GaN and AlN on Si(001)

Epitaxial growth of cubic GaN and AlN on Si(001)

Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy

Evidence of 2D-3D transition during the first stages of GaN growth on AlN

Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire

Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire

Evidence of 2D-3D transition during the first stages of GaN growth on AlN

Structural and optical properties of self-assembled GaN/AlN quantum dots

A Note on Climatological Normals

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