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Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-07, Vol.32 (4)

2014

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A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

IEEE journal of microwaves, 2023-10, Vol.3 (4), p.1134-1146

2023

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W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz

2023 Device Research Conference (DRC), 2023, p.1-2

2023

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Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

Journal of electronic materials, 2017-09, Vol.46 (9), p.5374-5378

2017

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Epitaxial Si, SiGe and Ge on binary and ternary rare earth oxide buffers

Physica status solidi. C, 2012-10, Vol.9 (10-11), p.2031-2035

2012

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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Epitaxial rare earth oxide and nitride buffers for GaN growth on Si

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.569-572

2014

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Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density

Journal of electronic materials, 2017-09, Vol.46 (9), p.5479-5483

2017

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz f T

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Doping Concentration

Journal of electronic materials, 2018-10, Vol.47 (10), p.5699-5704

2018

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Analysis of Carrier Transport in n-Type Hg1−x Cd x Te with Ultra-Low Doping Concentration

Journal of electronic materials, 2018-10, Vol.47 (10), p.5699-5704

2018

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W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

IEEE microwave and wireless technology letters (Print), 2023-02, Vol.33 (2), p.161-164

2023

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Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-03, Vol.32 (2)

2014

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High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.573-575

2020

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High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, p.97-100

2023

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Novel High-speed Linear GaN Technology with High Efficiency

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.1130-1132

2019

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Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.302-304

2022

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Deposition of GaN films on crystalline rare earth oxides by MOCVD

Journal of crystal growth, 2014-08, Vol.399, p.49-53

2014

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Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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Epitaxial Si and Gd 2 O 3 Heterostructures - Distributed Bragg Reflectors with Stress Management Function for GaN on Si Light Emitting Devices

ECS transactions, 2013-03, Vol.50 (4), p.47-52

2013

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InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Physica status solidi. C, 2009-06, Vol.6 (6), p.1394-1398

2009

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Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment

2022 99th ARFTG Microwave Measurement Conference (ARFTG), 2022, p.1-4

2022

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Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023, p.141-144

2023

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Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

Epitaxial Si, SiGe and Ge on binary and ternary rare earth oxide buffers

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Epitaxial rare earth oxide and nitride buffers for GaN growth on Si

Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz f T

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Doping Concentration

Analysis of Carrier Transport in n-Type Hg1−x Cd x Te with Ultra-Low Doping Concentration

W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures

High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs

Novel High-speed Linear GaN Technology with High Efficiency

Highly Linear and Efficient mm-Wave GaN HEMTs and MMICs

Deposition of GaN films on crystalline rare earth oxides by MOCVD

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Epitaxial Si and Gd 2 O 3 Heterostructures - Distributed Bragg Reflectors with Stress Management Function for GaN on Si Light Emitting Devices

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment

Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process

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