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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

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High wear-resistance characteristic of boron-doped nano-polycrystalline diamond on optical glass

Diamond and related materials, 2016-11, Vol.70, p.7-11

2016

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Real indentation hardness of nano-polycrystalline cBN synthesized by direct conversion sintering under HPHT

Diamond and related materials, 2014-09, Vol.48, p.47-51

2014

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Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation

Journal of crystal growth, 2017-11, Vol.477, p.197-200

2017

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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Thin solid films, 2014-04, Vol.557, p.76-79

2014

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(11)C-methylaminoisobutyric acid (MeAIB) PET for evaluation of prostate cancer: compared with (18)F-fluorodeoxyglucose PET

Annals of nuclear medicine, 2016-10, Vol.30 (8), p.553-562

2016

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Long-term effects of etelcalcetide as intravenous calcimimetic therapy in hemodialysis patients with secondary hyperparathyroidism

Clinical and experimental nephrology, 2018-04, Vol.22 (2), p.426-436

2018

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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Journal of crystal growth, 2013-09, Vol.378, p.251-253

2013

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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

Applied physics letters, 2009-09, Vol.95 (12)

2009

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A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.245-253

2005

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Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

Applied physics letters, 2013-01, Vol.102 (1), p.11902

2013

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Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

Journal of applied physics, 2010-05, Vol.107 (10), p.103509-103509-5

2010

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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Applied physics letters, 2004-09, Vol.85 (13), p.2514-2516

2004

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Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si + implantation

Thin solid films, 2010, Vol.518 (6), p.S162-S164

2010

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Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

Microelectronic engineering, 2011-04, Vol.88 (4), p.465-468

2011

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Heterogeneous Multicore SoC With SiP for Secure Multimedia Applications

IEEE journal of solid-state circuits, 2009-08, Vol.44 (8), p.2251-2259

2009

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IEEE_Xplore

The Design and Implementation of the Massively Parallel Processor Based on the Matrix Architecture

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.183-192

2007

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IEEE_Xplore

Strain field and related roughness formation in SiGe relaxed buffer layers

Thin solid films, 2006-06, Vol.508 (1), p.117-119

2006

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A High-Density Scalable Twin Transistor RAM (TTRAM) With Verify Control for SOI Platform Memory IPs

IEEE journal of solid-state circuits, 2007-11, Vol.42 (11), p.2611-2619

2007

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IEEE_Xplore

Development and implementation of CAE system HEARTS for heat treatment simulation based on metallo-thermo-mechanics

Journal of materials engineering and performance, 1997-02, Vol.6 (1), p.51-60

1997

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Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

Thin solid films, 2008-11, Vol.517 (1), p.254-256

2008

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The Circuits and Robust Design Methodology of the Massively Parallel Processor Based on the Matrix Architecture

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.804-812

2007

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IEEE_Xplore

Flash visual evoked potential findings in unilateral schizencephaly

No to hattatsu, 2009-01, Vol.41 (1), p.58

2009

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Nanocomposites based on exfoliated NbWO6 nanosheets and ionic polyacetylenes

Solid state ionics, 2006-01, Vol.177 (1-2), p.197-201

2006

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A Configurable Enhanced TTRAM Macro for System-Level Power Management Unified Memory

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.853-861

2007

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IEEE_Xplore

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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

High wear-resistance characteristic of boron-doped nano-polycrystalline diamond on optical glass

Real indentation hardness of nano-polycrystalline cBN synthesized by direct conversion sintering under HPHT

Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

(11)C-methylaminoisobutyric acid (MeAIB) PET for evaluation of prostate cancer: compared with (18)F-fluorodeoxyglucose PET

Long-term effects of etelcalcetide as intravenous calcimimetic therapy in hemodialysis patients with secondary hyperparathyroidism

On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture

Reflectance anisotropies of compressively strained Si grown on vicinal Si1−xCx(001)

Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique

Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si + implantation

Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

Heterogeneous Multicore SoC With SiP for Secure Multimedia Applications

The Design and Implementation of the Massively Parallel Processor Based on the Matrix Architecture

Strain field and related roughness formation in SiGe relaxed buffer layers

A High-Density Scalable Twin Transistor RAM (TTRAM) With Verify Control for SOI Platform Memory IPs

Development and implementation of CAE system HEARTS for heat treatment simulation based on metallo-thermo-mechanics

Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition

The Circuits and Robust Design Methodology of the Massively Parallel Processor Based on the Matrix Architecture

Flash visual evoked potential findings in unilateral schizencephaly

Nanocomposites based on exfoliated NbWO6 nanosheets and ionic polyacetylenes

A Configurable Enhanced TTRAM Macro for System-Level Power Management Unified Memory

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