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Nanocarbon-assisted chemical etching of Ge(100) in H2O2

Electrochemistry communications, 2024-06, Vol.163, p.107735, Article 107735

2024

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Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing

International journal of machine tools & manufacture, 2019-09, Vol.144, p.103431, Article 103431

2019

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Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

Scientific reports, 2020-11, Vol.10 (1), p.19432-19432, Article 19432

2020

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Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface

Electrochemistry communications, 2019-03, Vol.100, p.1-5

2019

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Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers

Ceramics international, 2022-03, Vol.48 (6), p.7570-7583

2022

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High-quality plasma-assisted polishing of aluminum nitride ceramic

CIRP annals, 2020, Vol.69 (1), p.301-304

2020

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Separation of Neighboring Terraces on a Flattened Si(111) Surface by Selective Etching along Step Edges Using Total Wet Chemical Processing

Langmuir, 2022-03, Vol.38 (12), p.3748-3754

2022

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Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

Electrochimica acta, 2018-05, Vol.271, p.666-676

2018

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Effects of polishing pressure and sliding speed on the material removal mechanism of single crystal diamond in plasma-assisted polishing

Diamond and related materials, 2022-04, Vol.124, p.108899, Article 108899

2022

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Chemical etching of a semiconductor surface assisted by single sheets of reduced graphene oxide

Carbon (New York), 2018-02, Vol.127, p.681-687

2018

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Highly efficient finishing of large-sized single crystal diamond substrates by combining nanosecond pulsed laser trimming and plasma-assisted polishing

Ceramics international, 2023-06, Vol.49 (11), p.19109-19123

2023

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Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing

Journal of manufacturing processes, 2021-10, Vol.70, p.350-360

2021

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Comparison of surface and subsurface damage of mosaic single-crystal diamond substrate processed by mechanical and plasma-assisted polishing

Diamond and related materials, 2021-11, Vol.119, p.108555, Article 108555

2021

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Catalytic Properties of Chemically Modified Graphene Sheets to Enhance Etching of Ge Surface in Water

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6121-6129

2020

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Single-nanometer focusing of hard x-rays by Kirkpatrick–Baez mirrors

Journal of physics. Condensed matter, 2011-10, Vol.23 (39), p.394206-np

2011

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Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation

Journal of applied physics, 2019-08, Vol.126 (6)

2019

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Investigation of reaction sequence occurring in graphene-assisted chemical etching of Ge surfaces in water

Materials science in semiconductor processing, 2018-11, Vol.87, p.32-36

2018

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Nanopore Fabrication of Two-Dimensional Materials on SiO2 Membranes Using He Ion Microscopy

IEEE transactions on nanotechnology, 2018-07, Vol.17 (4), p.727-730

2018

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Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Journal of applied physics, 2016-09, Vol.120 (9)

2016

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Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2

Journal of physical chemistry. C, 2013-01, Vol.117 (1), p.165-171

2013

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Water Adsorption, Solvation, and Deliquescence of Potassium Bromide Thin Films on SiO2 Studied by Ambient-Pressure X-ray Photoelectron Spectroscopy

Journal of physical chemistry. C, 2010-09, Vol.114 (35), p.14900-14906

2010

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Obtaining Atomically Smooth 4H–SiC (0001) Surface by Controlling Balance Between Anodizing and Polishing in Electrochemical Mechanical Polishing

Nanomanufacturing and metrology, 2019-09, Vol.2 (3), p.140-147

2019

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Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning

Nanoscale research letters, 2013-04, Vol.8 (1), p.151-151, Article 151

2013

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Aggregation of carbon atoms at SiO2/SiC(0001) interface by plasma oxidation toward formation of pit-free graphene

Carbon (New York), 2014-12, Vol.80, p.440-445

2014

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Catalytic behavior of metallic particles in anisotropic etching of Ge(100) surfaces in water mediated by dissolved oxygen

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Nanocarbon-assisted chemical etching of Ge(100) in H2O2

Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing

Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface

Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers

High-quality plasma-assisted polishing of aluminum nitride ceramic

Separation of Neighboring Terraces on a Flattened Si(111) Surface by Selective Etching along Step Edges Using Total Wet Chemical Processing

Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

Effects of polishing pressure and sliding speed on the material removal mechanism of single crystal diamond in plasma-assisted polishing

Chemical etching of a semiconductor surface assisted by single sheets of reduced graphene oxide

Highly efficient finishing of large-sized single crystal diamond substrates by combining nanosecond pulsed laser trimming and plasma-assisted polishing

Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing

Comparison of surface and subsurface damage of mosaic single-crystal diamond substrate processed by mechanical and plasma-assisted polishing

Catalytic Properties of Chemically Modified Graphene Sheets to Enhance Etching of Ge Surface in Water

Single-nanometer focusing of hard x-rays by Kirkpatrick–Baez mirrors

Improvements in graphene growth on 4H-SiC(0001) using plasma induced surface oxidation

Investigation of reaction sequence occurring in graphene-assisted chemical etching of Ge surfaces in water

Nanopore Fabrication of Two-Dimensional Materials on SiO2 Membranes Using He Ion Microscopy

Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Water Growth on GeO2/Ge(100) Stack and Its Effect on the Electronic Properties of GeO2

Water Adsorption, Solvation, and Deliquescence of Potassium Bromide Thin Films on SiO2 Studied by Ambient-Pressure X-ray Photoelectron Spectroscopy

Obtaining Atomically Smooth 4H–SiC (0001) Surface by Controlling Balance Between Anodizing and Polishing in Electrochemical Mechanical Polishing

Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning

Aggregation of carbon atoms at SiO2/SiC(0001) interface by plasma oxidation toward formation of pit-free graphene

Catalytic behavior of metallic particles in anisotropic etching of Ge(100) surfaces in water mediated by dissolved oxygen

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