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InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

Optics letters, 2013-08, Vol.38 (15), p.2750

2013

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Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells

Journal of physics. D, Applied physics, 2013-08, Vol.46 (31), p.315103-1-5

2013

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The Effect of Reworking Exam Problems on Problem-Solving Performance in a Circuit Analysis Course: An Exploratory Study

IEEE transactions on education, 2014-05, Vol.57 (2), p.107-111

Holmes, Archie L.

2014

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Synthesis and near infrared luminescence of a tetrametallic Zn2Yb2 architecture from a trinuclear Zn3L2 Schiff base complex

Dalton transactions : an international journal of inorganic chemistry, 2005-01 (5), p.849-851

2005

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InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 \mathbf m Wavelength

Journal of lightwave technology, 2018-10, Vol.36 (20), p.4981-4987

2018

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SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

IEEE journal of quantum electronics, 2011-09, Vol.47 (9), p.1244-1250

2011

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Design and synthesis of a near infra-red luminescent hexanuclear Zn-Nd prism

Chemical communications (Cambridge, England), 2006-01 (17), p.1836-1838

2006

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InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 [Formula Omitted]m Wavelength

Journal of lightwave technology, 2018-01, Vol.36 (20), p.4981

2018

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Multinuclear Luminescent Schiff-Base Zn−Nd Sandwich Complexes

Inorganic chemistry, 2006-05, Vol.45 (11), p.4340-4345

2006

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Design, Fabrication, and Characterizations of Novel Multispectral Photodetectors Using Postgrowth Fabry-Perot Optical Filters for Simultaneous Near Infrared/Short-Wave Infrared Detection

IEEE journal of quantum electronics, 2014-11, Vol.50 (11), p.1-7

2014

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Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN

Journal of crystal growth, 2002-09, Vol.243 (3), p.396-403

2002

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Impact-ionization and noise characteristics of thin III-V avalanche photodiodes

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2722-2731

2001

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Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

Journal of crystal growth, 2005-06, Vol.280 (1-2), p.7-15

2005

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Near Infrared Luminescence and Supramolecular Structure of a Helical Triple-Decker Yb(III) Schiff Base Cluster

Crystal growth & design, 2006-09, Vol.6 (9), p.2122-2125

2006

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Synthesis, crystal structures and antenna-like sensitization of visible and near infrared emission in heterobimetallic Zn–Eu and Zn–Nd Schiff base compounds

Polyhedron, 2006-01, Vol.25 (2), p.271-278

2006

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Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2007-11, Vol.91 (19)

2007

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Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region

IEEE journal of quantum electronics, 2003-02, Vol.39 (2), p.375-378

2003

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High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode

Physica status solidi. A, Applied research, 2004-10, Vol.201 (13), p.3037-3041

2004

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Unintentional calcium incorporation in Ga(Al, In, N)As

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2007-05, Vol.25 (3), p.1058-1062

2007

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The effects of test-enhanced learning on student learning in an electric circuits course

2014 IEEE Frontiers in Education Conference (FIE) Proceedings, 2014, p.1-7

Holmes, Archie L.

2014

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Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization

Applied physics letters, 2006-07, Vol.89 (4)

2006

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Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 \mu m

IEEE photonics technology letters, 2011-02, Vol.23 (4), p.218-220

2011

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Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

Journal of electronic materials, 2004-08, Vol.33 (8), p.851-860

2004

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A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

IEEE photonics technology letters, 2005-12, Vol.17 (12), p.2715-2717

2005

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Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescence

Journal of electronic materials, 2003, Vol.32 (1), p.29-33

2003

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InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region

Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells

The Effect of Reworking Exam Problems on Problem-Solving Performance in a Circuit Analysis Course: An Exploratory Study

Synthesis and near infrared luminescence of a tetrametallic Zn2Yb2 architecture from a trinuclear Zn3L2 Schiff base complex

InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 \mathbf m Wavelength

SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

Design and synthesis of a near infra-red luminescent hexanuclear Zn-Nd prism

InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 [Formula Omitted]m Wavelength

Multinuclear Luminescent Schiff-Base Zn−Nd Sandwich Complexes

Design, Fabrication, and Characterizations of Novel Multispectral Photodetectors Using Postgrowth Fabry-Perot Optical Filters for Simultaneous Near Infrared/Short-Wave Infrared Detection

Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN

Impact-ionization and noise characteristics of thin III-V avalanche photodiodes

Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

Near Infrared Luminescence and Supramolecular Structure of a Helical Triple-Decker Yb(III) Schiff Base Cluster

Synthesis, crystal structures and antenna-like sensitization of visible and near infrared emission in heterobimetallic Zn–Eu and Zn–Nd Schiff base compounds

Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region

High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode

Unintentional calcium incorporation in Ga(Al, In, N)As

The effects of test-enhanced learning on student learning in an electric circuits course

Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization

Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 \mu m

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescence

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