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A new and simple model for GaAs heterojunction FET gate characteristics

IEEE transactions on electron devices, 1988-05, Vol.35 (5), p.570-577

1988

Volltextzugriff (PDF)

High responsivity HgCdTe heterojunction photoconductor

Journal of applied physics, 1985-09, Vol.58 (6), p.2360-2370

1985

Volltextzugriff (PDF)

Optical absorption and x-ray diffraction in narrow-band-gap InAs/GaSb superlattices

Journal of applied physics, 1985-11, Vol.58 (10), p.3933-3935

1985

Volltextzugriff (PDF)

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2371-2379

1989

Volltextzugriff (PDF)

Superlattice conduction in superlattice modulation-doped field-effect transistors

Journal of applied physics, 1987-02, Vol.61 (4), p.1503-1509

1987

Volltextzugriff (PDF)

Mobility enhancement in highly doped GaAs quantum wells

Journal of applied physics, 1987-02, Vol.61 (4), p.1643-1645

1987

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The influence of electric field and mobility profile on GaAs MESFET characteristics

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2405-2414

1989

Volltextzugriff (PDF)

Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

IEEE transactions on electron devices, 1987-08, Vol.34 (8), p.1650-1657

1987

Volltextzugriff (PDF)

New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

IEEE electron device letters, 1986-02, Vol.7 (2), p.78-80

1986

Volltextzugriff (PDF)

Evidence for GaAs substrate strain caused by a CdTe epitaxial layer

Journal of crystal growth, 1985, Vol.71 (1), p.149-154

1985

Volltextzugriff (PDF)

New mechanism of gate current in heterostructure insulated gate field-effect transistors

IEEE electron device letters, 1986-09, Vol.7 (9), p.519-521

1986

Volltextzugriff (PDF)

HgCdTe heterojunction contact photoconductor

Applied physics letters, 1984-01, Vol.45 (1), p.83-85

1984

Volltextzugriff (PDF)

High-performance self-aligned gate (Al,Ga)As/GaAs MODFET's on MBE layers grown on (100) silicon substrates

IEEE electron device letters, 1986-11, Vol.7 (11), p.635-637

1986

Volltextzugriff (PDF)

High-performance self-aligned gate AlGaAs/GaAs MODFET voltage comparator

IEEE electron device letters, 1987-09, Vol.8 (9), p.431-433

1987

Volltextzugriff (PDF)

Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs

Applied physics letters, 1986-04, Vol.48 (15), p.994-996

1986

Volltextzugriff (PDF)

A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2204-2216

1989

Volltextzugriff (PDF)

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

IEEE electron device letters, 1988-07, Vol.9 (7), p.355-357

1988

Volltextzugriff (PDF)

VA-7 ionizing radiation response of GaAs heterostructure technologies

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2377-2377

1987

Volltextzugriff (PDF)

Layer intermixing in HgTe-CdTe superlattices

Applied physics letters, 1986-06, Vol.48 (23), p.1588-1590

1986

Volltextzugriff (PDF)

Study of strain in pseudomorphic InGaAs heterostructures related to the enhanced performance of p‐channel heterostructure field effect transistor devices

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-03, Vol.7 (2), p.371-375

1989

Volltextzugriff (PDF)

IIA-5 light and thermal sensitivity studies on three novel AlGaAs/GaAs 2 DEG structures: HIGFET, pulsed-doped MODFET, and superlattice MODFET

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1839-1839

1986

Volltextzugriff (PDF)

Ionizing radiation hardness of GaAs technologies

IEEE transactions on nuclear science, 1987-12, Vol.NS-34 (6), p.1664-1668

1987

Volltextzugriff (PDF)

Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs

Electronics letters, 1987, Vol.23 (2), p.87

1987

Volltextzugriff (PDF)

Ionizing Radiation Hardness of GaAs Technologies

IEEE transactions on nuclear science, 1987-12, Vol.34 (6), p.1663-1668, Article 1664

1987

Volltextzugriff (PDF)

0.5-mu m gate length self-aligned gate MODFET with reducedshort-channel effects

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2448-2449

1988

Volltextzugriff (PDF)

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A new and simple model for GaAs heterojunction FET gate characteristics

High responsivity HgCdTe heterojunction photoconductor

Optical absorption and x-ray diffraction in narrow-band-gap InAs/GaSb superlattices

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

Superlattice conduction in superlattice modulation-doped field-effect transistors

Mobility enhancement in highly doped GaAs quantum wells

The influence of electric field and mobility profile on GaAs MESFET characteristics

Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

Evidence for GaAs substrate strain caused by a CdTe epitaxial layer

New mechanism of gate current in heterostructure insulated gate field-effect transistors

HgCdTe heterojunction contact photoconductor

High-performance self-aligned gate (Al,Ga)As/GaAs MODFET's on MBE layers grown on (100) silicon substrates

High-performance self-aligned gate AlGaAs/GaAs MODFET voltage comparator

Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs

A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

VA-7 ionizing radiation response of GaAs heterostructure technologies

Layer intermixing in HgTe-CdTe superlattices

Study of strain in pseudomorphic InGaAs heterostructures related to the enhanced performance of p‐channel heterostructure field effect transistor devices

IIA-5 light and thermal sensitivity studies on three novel AlGaAs/GaAs 2 DEG structures: HIGFET, pulsed-doped MODFET, and superlattice MODFET

Ionizing radiation hardness of GaAs technologies

Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs

Ionizing Radiation Hardness of GaAs Technologies

0.5-mu m gate length self-aligned gate MODFET with reducedshort-channel effects

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