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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures

Low temperature physics (Woodbury, N.Y.), 2021-01, Vol.47 (1), p.14-18

2021

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On the issue of universality of critical exponents in the quantum Hall effect mode

Low temperature physics (Woodbury, N.Y.), 2019-02, Vol.45 (2), p.181-188

2019

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HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

Low temperature physics (Woodbury, N.Y.), 2019-04, Vol.45 (4), p.412-418

2019

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Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1551-1558

2018

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Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

Journal of low temperature physics, 2016-12, Vol.185 (5-6), p.665-672

2016

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Insulator-quantum Hall transition in n -InGaAs/GaAs heterostructures

Low temperature physics (Woodbury, N.Y.), 2017-04, Vol.43 (4), p.491-494

2017

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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (15), p.1989-1989

2018

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Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1545-1549

2015

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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.272-278

2017

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Conditions for experimental observation of the critical behavior of the longitudinal and Hall resistance in the quantum Hall regime in gallium and indium arsenide-based heterostructures

Low temperature physics (Woodbury, N.Y.), 2017-04, Vol.43 (4), p.478-484

2017

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Quantum magnetotransport in n -InGaAs/GaAs structures with electron density changes caused by infrared radiation

Low temperature physics (Woodbury, N.Y.), 2015-03, Vol.41 (3), p.221-232

2015

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Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.181-186

2015

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Quantum Hall plateau-plateau transitions in n -InGaAs/GaAs heterostructures before and after IR illumination

Low temperature physics (Woodbury, N.Y.), 2015-02, Vol.41 (2), p.106-111

2015

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Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

Journal of experimental and theoretical physics, 2013-07, Vol.117 (1), p.144-152

2013

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Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1447-1451

2013

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Effect of impurity potential range on a scaling behavior in the quantum Hall regime

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5192-5195

2009

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Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures

IOP conference series. Materials Science and Engineering, 2019-02, Vol.475 (1), p.12029

2019

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Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1641-1646

2016

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Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1641-1646

2016

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Temperature dependence of quantum lifetime in n -InGaAs/GaAs structures with strongly coupled double quantum wells

Low temperature physics (Woodbury, N.Y.), 2013-01, Vol.39 (1), p.43-49

2013

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STEREOSCOPIC OSCILLATIONS OF THE n - InGaAs/GaAs DOUBLE QUANTUM WELL MAGNETORESISTANCE UNDER TILTED MAGNETIC FIELDS

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2007-04, Vol.21 (8n09), p.1399-1403

2007

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Transport Properties of 2D-Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic-Field-Induced Insulator-Quantum Hall Liquid Transition

Physics of Semiconductors; Part A, 2007, Vol.893, p.647-648

2007

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The effect of infrared radiation on quantum magnetotransport in n -InGaAs/GaAs with two strongly coupled quantum wells

Low temperature physics (Woodbury, N.Y.), 2013-04, Vol.39 (4), p.374-377

2013

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Spin Effects in the n-InxGa1-xAs/GaAs Double Quantum Well Magnetoresistance Under Tilted Magnetic Fields

Physics of Semiconductors; Part A, 2007, Vol.893, p.631-632

2007

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Scaling in the Quantum Hall Regime for a Double Quantum Well Nanostructure in High Magnetic Field

Solid state phenomena, 2014-04, Vol.215, p.208-213

2014

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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures

On the issue of universality of critical exponents in the quantum Hall effect mode

HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

Insulator-quantum Hall transition in n -InGaAs/GaAs heterostructures

Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

Conditions for experimental observation of the critical behavior of the longitudinal and Hall resistance in the quantum Hall regime in gallium and indium arsenide-based heterostructures

Quantum magnetotransport in n -InGaAs/GaAs structures with electron density changes caused by infrared radiation

Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

Quantum Hall plateau-plateau transitions in n -InGaAs/GaAs heterostructures before and after IR illumination

Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells

Effect of impurity potential range on a scaling behavior in the quantum Hall regime

Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures

Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

Temperature dependence of quantum lifetime in n -InGaAs/GaAs structures with strongly coupled double quantum wells

STEREOSCOPIC OSCILLATIONS OF THE n - InGaAs/GaAs DOUBLE QUANTUM WELL MAGNETORESISTANCE UNDER TILTED MAGNETIC FIELDS

Transport Properties of 2D-Electron Gas in a InGaAs/GaAs DQW in a Vicinity of Low Magnetic-Field-Induced Insulator-Quantum Hall Liquid Transition

The effect of infrared radiation on quantum magnetotransport in n -InGaAs/GaAs with two strongly coupled quantum wells

Spin Effects in the n-InxGa1-xAs/GaAs Double Quantum Well Magnetoresistance Under Tilted Magnetic Fields

Scaling in the Quantum Hall Regime for a Double Quantum Well Nanostructure in High Magnetic Field

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