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Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers

Physical review. B, Condensed matter and materials physics, 2015-11, Vol.92 (19), Article 195129

2015

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Tunnel conductance spectroscopy via harmonic generation in a hybrid capacitor device

Applied physics letters, 2013-09, Vol.103 (12)

Appelbaum, Ian

2013

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Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2011-09, Vol.369 (1951), p.3554-3574

Appelbaum, Ian

2011

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Electronic measurement and control of spin transport in silicon

Nature, 2007-05, Vol.447 (7142), p.295-298

2007

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Coherent spin transport through a 350 micron thick silicon wafer

Physical review letters, 2007-10, Vol.99 (17), p.177209-177209, Article 177209

2007

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Electrons and holes in phosphorene

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (11), Article 115439

2014

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Inelastic electron tunneling spectroscopy of local “spin accumulation” devices

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Field-Induced Negative Differential Spin Lifetime in Silicon

Physical review letters, 2012-04, Vol.108 (15), Article 157201

2012

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Lateral spin transport through bulk silicon

Applied physics letters, 2012-04, Vol.100 (16), p.162408-162408-3

2012

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Interpreting current-induced spin polarization in topological insulator surface states

Physical review. B, 2016-06, Vol.93 (22), Article 220404

2016

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Proposal for a topological plasmon spin rectifier

Applied physics letters, 2011-01, Vol.98 (2), p.023103-023103-3

2011

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Electrons, holes, and spin in the IV-VI monolayer four-six-enes

Physical review. B, 2016-10, Vol.94 (15), p.155124, Article 155124

2016

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Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions

Physical review. B, Condensed matter and materials physics, 2014-12, Vol.90 (22), Article 220402

2014

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Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

Applied physics letters, 2008-10, Vol.93 (16), p.162508-162508-3

2008

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Reverse Schottky-asymmetry spin current detectors

Applied physics letters, 2010-10, Vol.97 (16), p.162501-162501-3

2010

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Transit-time spin field-effect transistor

Applied physics letters, 2007-06, Vol.90 (26), p.262501-262501-3

2007

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Spin-polarized transient electron trapping in phosphorus-doped silicon

Physical review letters, 2011-05, Vol.106 (21), p.217202-217202, Article 217202

2011

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Oblique Hanle effect in semiconductor spin transport devices

Applied physics letters, 2008-04, Vol.92 (14), p.142507-142507-3

2008

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Anisotropy-Driven Spin Relaxation in Germanium

Physical review letters, 2013-12, Vol.111 (25), Article 257204

2013

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Cross-polarized microwave surface-state anti-resonance

Journal of applied physics, 2014-08, Vol.116 (6)

Appelbaum, Ian

2014

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Magnetocurrent of ballistically injected electrons in insulating silicon

Applied physics letters, 2010-11, Vol.97 (18), p.182108-182108-3

2010

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Non-ohmic spin transport in n-type doped silicon

Physical review. B, Condensed matter and materials physics, 2008-10, Vol.78 (16), Article 165329

2008

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Excitons without effective mass: Biased bilayer graphene

Physical review. B, 2019-01, Vol.99 (3), p.1, Article 035429

2019

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Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

Physical review. B, 2018-03, Vol.97 (12), Article 125434

2018

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Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (16), Article 165318

2011

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Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers

Tunnel conductance spectroscopy via harmonic generation in a hybrid capacitor device

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Electronic measurement and control of spin transport in silicon

Coherent spin transport through a 350 micron thick silicon wafer

Electrons and holes in phosphorene

Inelastic electron tunneling spectroscopy of local “spin accumulation” devices

Field-Induced Negative Differential Spin Lifetime in Silicon

Lateral spin transport through bulk silicon

Interpreting current-induced spin polarization in topological insulator surface states

Proposal for a topological plasmon spin rectifier

Electrons, holes, and spin in the IV-VI monolayer four-six-enes

Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions

Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

Reverse Schottky-asymmetry spin current detectors

Transit-time spin field-effect transistor

Spin-polarized transient electron trapping in phosphorus-doped silicon

Oblique Hanle effect in semiconductor spin transport devices

Anisotropy-Driven Spin Relaxation in Germanium

Cross-polarized microwave surface-state anti-resonance

Magnetocurrent of ballistically injected electrons in insulating silicon

Non-ohmic spin transport in n-type doped silicon

Excitons without effective mass: Biased bilayer graphene

Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation

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