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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Applied physics letters, 2014-02, Vol.104 (8)

2014

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Random telegraph noise: The key to single defect studies in nano-devices

Thin solid films, 2016-08, Vol.613, p.2-5

2016

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Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics

Solid-state electronics, 2014-07, Vol.97, p.14-22

2014

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Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1272-1278

2012

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Optimizing the Readout Bias for the Capacitorless 1T Bulk FinFET RAM Cell

IEEE electron device letters, 2009-12, Vol.30 (12), p.1377-1379

2009

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Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs

Semiconductor science and technology, 2014-11, Vol.29 (11)

2014

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Stress Memorization Technique-Fundamental Understanding and Low-Cost Integration for Advanced CMOS Technology Using a Nonselective Process

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1690-1697

2009

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Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Microelectronic engineering, 2013-09, Vol.109, p.314-317

2013

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Reaction-dispersive proton transport model for negative bias temperature instabilities

Applied physics letters, 2005-02, Vol.86 (9), p.093506-093506-3

2005

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Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2966-2973

2012

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Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Microelectronic engineering, 2009-07, Vol.86 (7), p.1894-1896

2009

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Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

ECS journal of solid state science and technology, 2016, Vol.5 (6), p.N27-N31

2016

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Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Solid-state electronics, 2014-07, Vol.97, p.30-37

2014

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Study of Random Telegraph Noise in UTBOX Silicon-on-Insulator nMOSFETs

ECS transactions, 2014, Vol.60 (1), p.109-114

2014

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Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells

Solid-state electronics, 2011-11, Vol.65-66, p.205-210

2011

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Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.130-133

2005

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Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Applied physics letters, 2005-04, Vol.86 (17)

2005

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(Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors

ECS transactions, 2013, Vol.58 (10), p.143-152

2013

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Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2042-2048

2012

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I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration

2015 International Conference on IC Design & Technology (ICICDT), 2015, p.1-4

2015

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Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

IEEE electron device letters, 2007-07, Vol.28 (7), p.613-615

2007

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The activation energy dependence on the electric field in UTBOX SOI FBRAM devices

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013, p.1-2

2013

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Electrical Properties of Low-VT Metal-Gated n-MOSFETs Using La2O3/SiOx as Interfacial Layer Between HfLaO High-κ Dielectrics and Si Channel

IEEE electron device letters, 2008-05, Vol.29 (5), p.430-433

2008

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Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x)ON/TaN based pMOSFETs

Microelectronic engineering, 2005-06, Vol.80, p.134-137

2005

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Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2167-2172

2012

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Random telegraph noise: The key to single defect studies in nano-devices

Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics

Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells

Optimizing the Readout Bias for the Capacitorless 1T Bulk FinFET RAM Cell

Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs

Stress Memorization Technique-Fundamental Understanding and Low-Cost Integration for Advanced CMOS Technology Using a Nonselective Process

Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

Reaction-dispersive proton transport model for negative bias temperature instabilities

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Study of Random Telegraph Noise in UTBOX Silicon-on-Insulator nMOSFETs

Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells

Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

(Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors

Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

The activation energy dependence on the electric field in UTBOX SOI FBRAM devices

Electrical Properties of Low-VT Metal-Gated n-MOSFETs Using La2O3/SiOx as Interfacial Layer Between HfLaO High-κ Dielectrics and Si Channel

Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x)ON/TaN based pMOSFETs

Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

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