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Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect

Thin solid films, 2008-11, Vol.517 (1), p.369-371

2008

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Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputtering

Physica status solidi. A, Applications and materials science, 2009-07, Vol.206 (7), p.1504-1509

2009

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Numerical simulation of a low- and a high-electric-field photocurrent decay in a-Si:H

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.1184-1187

2006

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Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing

Materials science forum, 2009-01, Vol.609, p.129-132

2009

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Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements

Solar energy materials and solar cells, 2002-04, Vol.72 (1), p.551-558

2002

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Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si 1− x Ge x ) deposited by DC magnetron sputtering at high rate

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.690-693

2006

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Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature

Thin solid films, 2001-02, Vol.383 (1-2), p.192-195

2001

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Thin films of hydrogenated amorphous silicon and polycrystalline silicon; oxygen and hydrogen interaction effects on electrical properties

Sensors and actuators. B, Chemical, 1999-10, Vol.59 (2-3), p.225-230

1999

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Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects

Thin solid films, 2001-02, Vol.383 (1-2), p.264-266

2001

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Numerical simulation of low-field thermally stimulated conductivity in a-Si:H

Journal of non-crystalline solids, 2000-05, Vol.266, p.376-379

2000

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Acceptor and donor centers introduced by oxygen ionosorption at the a -Si:H film surface

Journal of applied physics, 1996-05, Vol.79 (9), p.7041-7050

1996

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Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering

Journal of non-crystalline solids, 1998-01, Vol.227, p.958-961

1998

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Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films

Solid state phenomena, 2001-01, Vol.80-81, p.127-132

2001

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Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputteringcharacteristic

Physica status solidi. A, Applications and materials science, 2009-07, Vol.2006 (7), p.1504-1509

2009

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Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

Superlattices and microstructures, 2006-10, Vol.40 (4), p.598-602

2006

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Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate

Solid state phenomena, 1999-01, Vol.67-68, p.217-222

1999

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Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate

Solid state phenomena, 1999-01, Vol.67-68, p.113-118

1999

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Oxygen adsorption-desorption effect on the electrical properties of a-Si:H layers

Sensors and actuators. B, Chemical, 1995, Vol.26 (1), p.113-115

1995

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Electrical conductance variation of a-Si: H films during a temperature programmed desorption

The Journal of physics and chemistry of solids, 1993-09, Vol.54 (9), p.1009-1014

1993

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Numerical simulation of low-field thermally stimulated conductivity in a-Si:H

Journal of non-crystalline solids, 2000, Vol.266-69, p.376-379

2000

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Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering

Journal of non-crystalline solids, 1998, Vol.227-30, p.958-961

1998

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Structural Analysis of Diamond‐Like Carbon Films Deposited by RF (13.56 MHz) in a Methane Gas Plasma Atmosphere

Plasma Processes and Polymers, 2005, p.87-94

2005

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Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect

Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputtering

Numerical simulation of a low- and a high-electric-field photocurrent decay in a-Si:H

Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing

Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements

Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si 1− x Ge x ) deposited by DC magnetron sputtering at high rate

Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature

Thin films of hydrogenated amorphous silicon and polycrystalline silicon; oxygen and hydrogen interaction effects on electrical properties

Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects

Numerical simulation of low-field thermally stimulated conductivity in a-Si:H

Acceptor and donor centers introduced by oxygen ionosorption at the a -Si:H film surface

Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering

Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films

Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputteringcharacteristic

Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate

Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate

Oxygen adsorption-desorption effect on the electrical properties of a-Si:H layers

Electrical conductance variation of a-Si: H films during a temperature programmed desorption

Numerical simulation of low-field thermally stimulated conductivity in a-Si:H

Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering

Structural Analysis of Diamond‐Like Carbon Films Deposited by RF (13.56 MHz) in a Methane Gas Plasma Atmosphere

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