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Effect of the Titanium Nanoparticle on the Quantum Chemical Characterization of the Liquid Sodium Nanofluid

The journal of physical chemistry. B, 2016-04, Vol.120 (14), p.3527-3539

2016

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Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DC15-04DC15-6

2011

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Contribution of Carbon to Activation and Diffusion of Boron in Silicon

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DA06-04DA06-5

2010

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Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBA01

2019

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Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7R), p.76506

2011

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Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2564

2008

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Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Source/drain engineering for MOSFETs with embedded-Si:C technology

Applied surface science, 2008-07, Vol.254 (19), p.6135-6139

2008

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Atomistic study of sulfur diffusion and S2 formation in silicon during low-temperature rapid thermal annealing

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.41-44

2013

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Ultra high dose boron ion implantation: super-saturation of boron and its application

Materials chemistry and physics, 1998-07, Vol.54 (1), p.54-59

1998

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Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1162

1998

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Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7), p.076506-076506-8

2011

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Analysis of Resistivity Increase in Copper Nanoscale Interconnects Utilizing Monte Carlo Simulation and Optimum Wiring Structure to Suppress Resistivity Increase

Hyomen Kagaku, 2014/05/10, Vol.35(5), pp.250-255

2014

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A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

Solid-state electronics, 2007-11, Vol.51 (11), p.1437-1443

2007

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Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyond

2007 IEEE International Electron Devices Meeting, 2007, p.487-490

2007

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Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for $2\times$ nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DD09-04DD09-4

2010

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A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond

Solid-state electronics, 2007-11, Vol.51 (11-12), p.1437-1443

2007

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Modeling of Electron Mobility Degradation for HfSiON MISFETs

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.47-50

2006

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モンテカルロシミュレーションを用いた微細金属配線の電気抵抗率上昇挙動解明と抵抗率低減に向けた最適配線構造

表面科学, 2014/05/10, Vol.35(5), pp.250-255

2014

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Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1μm Metallic Interconnects

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009, p.1-4

2009

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Issues and Optimization of Millisecond Anneal Process for 45 nm node and beyond

MRS proceedings, 2006, Vol.912, Article 0912-C04-06

2006

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Deactivation mechanism of In atoms doped in a Si crystal and reactivation due to codoping with B and C

Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (20), p.205205.1-205205.8, Article 205205

2005

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Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion

2006 International Conference on Simulation of Semiconductor Processes and Devices, 2006, p.127-130

2006

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Anomalous diffusion of lightly implanted As into Si substrate during N2 annealing

Applied physics letters, 1994-06, Vol.64 (23), p.3133-3135

1994

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Effect of the Titanium Nanoparticle on the Quantum Chemical Characterization of the Liquid Sodium Nanofluid

Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor

Contribution of Carbon to Activation and Diffusion of Boron in Silicon

Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling

Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin

Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor

In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory

Source/drain engineering for MOSFETs with embedded-Si:C technology

Atomistic study of sulfur diffusion and S2 formation in silicon during low-temperature rapid thermal annealing

Ultra high dose boron ion implantation: super-saturation of boron and its application

Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)

Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin

Analysis of Resistivity Increase in Copper Nanoscale Interconnects Utilizing Monte Carlo Simulation and Optimum Wiring Structure to Suppress Resistivity Increase

A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyond

Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for $2\times$ nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory

A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond

Modeling of Electron Mobility Degradation for HfSiON MISFETs

モンテカルロシミュレーションを用いた微細金属配線の電気抵抗率上昇挙動解明と抵抗率低減に向けた最適配線構造

Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1μm Metallic Interconnects

Issues and Optimization of Millisecond Anneal Process for 45 nm node and beyond

Deactivation mechanism of In atoms doped in a Si crystal and reactivation due to codoping with B and C

Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion

Anomalous diffusion of lightly implanted As into Si substrate during N2 annealing

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