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Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Applied surface science, 2025-01, Vol.679, p.161268, Article 161268

2025

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Two-Step Consensus Clustering Approach to Immune Cell Infiltration: An Integrated Exploration and Validation of Prognostic and Immune Implications in Sarcomas

Heliyon, 2024-10, p.e38253, Article e38253

2024

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Comprehensive pan-cancer analysis: essential role of ABCB family genes in cancer

Translational cancer research, 2024-04, Vol.13 (4), p.1642-1664

2024

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Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317

2024

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Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Journal of crystal growth, 2023-06, Vol.611, p.127183, Article 127183

2023

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Development of functionalized CoOx-NiFe LDH bi-layers to improve the photoelectrochemical water oxidation property of n-Si photoanode

Journal of alloys and compounds, 2023-05, Vol.942, p.168948, Article 168948

2023

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

IEEE transactions on microwave theory and techniques, 2023-02, Vol.71 (2), p.898-906

2023

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Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

2022 10th International Symposium on Next-Generation Electronics (ISNE), 2023, p.1-3

2023

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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Chinese physics B, 2022-11, Vol.31 (12), p.127701-594

2022

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Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Journal of physics. D, Applied physics, 2022-10, Vol.55 (42), p.425101

2022

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BiVO4 photoanode modification by synergic dual-conjugated organic materials

Journal of alloys and compounds, 2022-10, Vol.918, p.165605, Article 165605

2022

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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga 2 O 3 /p-diamond heterojunction

Chinese physics B, 2022-09, Vol.31 (10), p.108105

2022

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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

Chinese physics B, 2022-09, Vol.31 (10), p.133-138

2022

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.n/a

2022

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454

2022

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21)

2022

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Metal-nitride dual-anode AlGaN/GaN heterostructure Schottky barrier diodes with tunable turn-on voltage and reverse leakage current

Semiconductor science and technology, 2022-04, Vol.37 (4), p.45013

2022

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Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays

Journal of luminescence, 2022-04, Vol.244, p.118740, Article 118740

2022

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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Chinese physics B, 2022-03, Vol.31 (4), p.47701-764

2022

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Crystal-reconstructed BiVO 4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Journal of materials chemistry. B, Materials for biology and medicine, 2022-02, Vol.10 (6), p.870-879

2022

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Crystal-reconstructed BiVO4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Journal of materials chemistry. B, Materials for biology and medicine, 2022-02, Vol.10 (6), p.870-879

2022

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Crystal-reconstructed BiVO semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Journal of materials chemistry. B, Materials for biology and medicine, 2022-02, Vol.1 (6), p.87-879

2022

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Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Two-Step Consensus Clustering Approach to Immune Cell Infiltration: An Integrated Exploration and Validation of Prognostic and Immune Implications in Sarcomas

Comprehensive pan-cancer analysis: essential role of ABCB family genes in cancer

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

Development of functionalized CoOx-NiFe LDH bi-layers to improve the photoelectrochemical water oxidation property of n-Si photoanode

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

BiVO4 photoanode modification by synergic dual-conjugated organic materials

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga 2 O 3 /p-diamond heterojunction

Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Metal-nitride dual-anode AlGaN/GaN heterostructure Schottky barrier diodes with tunable turn-on voltage and reverse leakage current

Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays

Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor

Crystal-reconstructed BiVO 4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Crystal-reconstructed BiVO4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Crystal-reconstructed BiVO semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

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