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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Advanced functional materials, 2019-08, Vol.29 (32), p.n/a

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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A review on photoelectrochemical cathodic protection semiconductor thin films for metals

Green energy & environment, 2017-10, Vol.2 (4), p.331-362

2017

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Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (18), p.8604-8611

2018

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Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

IEEE sensors journal, 2022-02, Vol.22 (3), p.1933-1938

2022

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Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-04, Vol.9 (14), p.9157-9164

2021

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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1171-1175

2020

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IEEE_Xplore

Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Journal of materials chemistry. A, Materials for energy and sustainability, 2018, Vol.6 (27), p.12956-12961

2018

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Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278

2021

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IEEE_Xplore

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

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IEEE_Xplore

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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IEEE_Xplore

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Advanced functional materials, 2017-04, Vol.27 (13), p.n/a

2017

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p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

IEEE sensors journal, 2020-01, Vol.20 (1), p.62-66

2020

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IEEE_Xplore

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.311-317

2021

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IEEE_Xplore

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317

2024

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IEEE_Xplore

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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IEEE_Xplore

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

IEEE transactions on microwave theory and techniques, 2023-02, Vol.71 (2), p.898-906

2023

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IEEE_Xplore

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Journal of alloys and compounds, 2019-04, Vol.780, p.476-481

2019

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GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4123-4129

2020

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IEEE_Xplore

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-5

2023

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IEEE_Xplore

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2867-2871

2021

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IEEE_Xplore

Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review

Green energy & environment, 2021-08, Vol.6 (4), p.479-495

2021

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Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

Nanoscale research letters, 2021-01, Vol.16 (1), p.8-7, Article 8

2021

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Improvement of BiVO4 Photoanode Performance During Water Photo‐Oxidation Using Rh‐Doped SrTiO3 Perovskite as a Co‐Catalyst

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

A review on photoelectrochemical cathodic protection semiconductor thin films for metals

Photogenerated-carrier separation along edge dislocation of WO3 single-crystal nanoflower photoanode

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Development of a bi-compound heterogeneous cocatalyst modified p-Si photocathode for boosting the photoelectrochemical water splitting performance

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review

Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet

Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect

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