UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 78

Sortiert nach

Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs

Journal of materials science. Materials in electronics, 2020-12, Vol.31 (24), p.22478-22486

2020

Volltextzugriff (PDF)

Study of the yield improvement and reliability of 28 nm advanced chips based on structural analysis

Journal of materials science. Materials in electronics, 2021-07, Vol.32 (13), p.18076-18086

2021

Volltextzugriff (PDF)

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Materials, 2020-02, Vol.13 (3), p.771

2020

Volltextzugriff (PDF)

Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

Journal of materials science. Materials in electronics, 2020-04, Vol.31 (8), p.5854-5860

2020

Volltextzugriff (PDF)

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (12), p.1867

2023

Volltextzugriff (PDF)

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (11), p.1786

2023

Volltextzugriff (PDF)

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

Nanomaterials (Basel, Switzerland), 2023-04, Vol.13 (7), p.1259

2023

Volltextzugriff (PDF)

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Nanomaterials (Basel, Switzerland), 2020-04, Vol.10 (4), p.793

2020

Volltextzugriff (PDF)

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (6), p.1408

2021

Volltextzugriff (PDF)

A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

IEEE electron device letters, 2004-09, Vol.25 (9), p.631-633

2004

Volltextzugriff (PDF)

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Nanomaterials (Basel, Switzerland), 2020-08, Vol.10 (9), p.1715

2020

Volltextzugriff (PDF)

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Solid-state electronics, 2013-05, Vol.83, p.37-41

2013

Volltextzugriff (PDF)

Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones

Applied physics letters, 2004-11, Vol.85 (22), p.5388-5390

2004

Volltextzugriff (PDF)

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-7

2023

Volltextzugriff (PDF)

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs using Gate Induced Drain Leakage

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1

2023

Volltextzugriff (PDF)

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance

ACS nano, 2023-11, Vol.17 (22), p.22259-22267

2023

Volltextzugriff (PDF)

Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure

Thin solid films, 2006-05, Vol.504 (1-2), p.69-72

2006

Volltextzugriff (PDF)

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4251-4258

2021

Volltextzugriff (PDF)

Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.77-79

2008

Volltextzugriff (PDF)

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

ACS applied materials & interfaces, 2023-12, Vol.15 (48), p.56567-56574

2023

Volltextzugriff (PDF)

Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme

Semiconductor science and technology, 2019-10, Vol.34 (12)

2019

Volltextzugriff (PDF)

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure With Large Energy Band Gap Tuning

IEEE transactions on nanotechnology, 2008-07, Vol.7 (4), p.422-426

2008

Volltextzugriff (PDF)

Development of plasma etching process for sub-50 nm TaN gate

Thin solid films, 2006-05, Vol.504 (1), p.140-144

2006

Volltextzugriff (PDF)

Investigation of Barrier Property of Amorphous Co-Ti Layer as Single Barrier/Liner in Local Co Interconnects

IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.1-6

2020

Volltextzugriff (PDF)

Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids

ACS applied materials & interfaces, 2020-10, Vol.12 (42), p.48170-48178

2020

Volltextzugriff (PDF)

1 – 25 von 78

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(56)
Mit Volltextzugriff
(78)

Publikationsform

Sprache

Englisch
(77)
Japanisch
(5)

Erscheinungsjahr

n.n

Thema

Science & Technology
(63)
Technology
(50)
Physical Sciences
(45)
Physics
(44)
Physics, Applied
(36)
Engineering
(33)
Engineering, Electrical & Electronic
(33)
Materials Science
(29)
Materials Science, Multidisciplinary
(26)
Physics, Condensed Matter
(18)
Silicon
(17)
Nanoscience & Nanotechnology
(16)
Science & Technology - Other Topics
(16)
Transistors
(14)
Exact Sciences And Technology
(12)
Chemistry
(9)
Epitaxial Growth
(9)
Etching
(9)
Applied Sciences
(8)
Chemistry, Multidisciplinary
(8)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs

Study of the yield improvement and reliability of 28 nm advanced chips based on structural analysis

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs using Gate Induced Drain Leakage

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance

Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme

Selective Intermixing of InAs/InGaAs/InP Quantum Dot Structure With Large Energy Band Gap Tuning

Development of plasma etching process for sub-50 nm TaN gate

Investigation of Barrier Property of Amorphous Co-Ti Layer as Single Barrier/Liner in Local Co Interconnects

Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids

Suchergebnisse filtern