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Green gap in GaN-based light-emitting diodes: in perspective

Critical reviews in solid state and materials sciences, 2021-09, Vol.46 (5), p.450-467

2021

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Upping the internal quantum efficiency of green light‐emitting diodes by employing a graded AlGaN barrier and an electron blocking layer

IET optoelectronics, 2021-02, Vol.15 (1), p.69-74

2021

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High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer

Optical and quantum electronics, 2020-06, Vol.52 (6), Article 320

2020

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Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

Journal of modern optics, 2020-05, Vol.67 (9), p.837-842

2020

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Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer

Optical and quantum electronics, 2020-06, Vol.52 (6), Article 303

2020

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Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

Optical and quantum electronics, 2021-11, Vol.53 (11), Article 637

2021

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Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes

Optics communications, 2020-06, Vol.464, p.125493, Article 125493

2020

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Recent Progress in Micro‐LED‐Based Display Technologies

Laser & photonics reviews, 2022-06, Vol.16 (6), p.n/a

2022

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Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping

Nanomaterials (Basel, Switzerland), 2022-12, Vol.12 (23), p.4347

2022

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Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations

Journal of physics. Condensed matter, 2021-09, Vol.33 (35), p.355402

2021

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Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-09, Vol.271, p.115279, Article 115279

2021

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Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes

Ceramics international, 2020-08, Vol.46 (11), p.18464-18468

2020

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Reduction in efficiency droop/decline of green GaN-based light-emitting diodes by employing heterostructure cap layer

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-08, Vol.258, p.114576, Article 114576

2020

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Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes

Physica scripta, 2019-10, Vol.94 (10), p.105808

2019

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Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region

Physica. E, Low-dimensional systems & nanostructures, 2020-03, Vol.117, p.113826, Article 113826

2020

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Droop-free internal quantum efficiency of p-InGaN/p-GaN superlattice electron blocking layer

Optik (Stuttgart), 2020-12, Vol.223, p.165514, Article 165514

2020

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Thickness-graded quantum barriers and composition-graded electron blocking layer for efficient green light-emitting diodes

Optik (Stuttgart), 2020-08, Vol.215, p.164767, Article 164767

2020

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Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells

Nanomaterials (Basel, Switzerland), 2022-07, Vol.12 (14), p.2418

2022

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Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer

Superlattices and microstructures, 2020-03, Vol.139, p.106417, Article 106417

2020

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Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes

Superlattices and microstructures, 2019-11, Vol.135, p.106271, Article 106271

2019

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Zigzag-shaped quantum well engineering of green light-emitting diode

Superlattices and microstructures, 2019-08, Vol.132, p.106164, Article 106164

2019

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Biaxial Relaxation Coefficient in Group-III Nitride Quantum Wells and Thin Films

Acta physica Polonica, A, 2022-02, Vol.141 (2), p.130-134

2022

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Microcavity- and Microlaser-Based Optical Barcoding: A Review of Encoding Techniques and Applications

ACS photonics, 2023-05, Vol.10 (5), p.1202-1224

2023

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Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes

Optical review (Tokyo, Japan), 2022-12, Vol.29 (6), p.498-503

2022

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Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection

Revista mexicana de física, 2022-03, Vol.68 (2 Mar-Apr)

2022

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Green gap in GaN-based light-emitting diodes: in perspective

Upping the internal quantum efficiency of green light‐emitting diodes by employing a graded AlGaN barrier and an electron blocking layer

High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer

Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer

Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes

Recent Progress in Micro‐LED‐Based Display Technologies

Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping

Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations

Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes

Reduction in efficiency droop/decline of green GaN-based light-emitting diodes by employing heterostructure cap layer

Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes

Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region

Droop-free internal quantum efficiency of p-InGaN/p-GaN superlattice electron blocking layer

Thickness-graded quantum barriers and composition-graded electron blocking layer for efficient green light-emitting diodes

Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells

Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer

Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes

Zigzag-shaped quantum well engineering of green light-emitting diode

Biaxial Relaxation Coefficient in Group-III Nitride Quantum Wells and Thin Films

Microcavity- and Microlaser-Based Optical Barcoding: A Review of Encoding Techniques and Applications

Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes

Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection

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