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Self-heating and trapping effects on the RF performance of GaN MESFETs

IEEE transactions on microwave theory and techniques, 2004-04, Vol.52 (4), p.1229-1236

2004

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Impact ionization in InAlAs/InGaAs/InAlAs HEMT's

IEEE electron device letters, 2000-05, Vol.21 (5), p.193-195

2000

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A physics-based frequency dispersion model of GaN MESFETs

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.846-853

2004

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A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series

IEEE transactions on microwave theory and techniques, 2001-09, Vol.49 (9), p.1518-1524

2001

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Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects

IEEE transactions on microwave theory and techniques, 2002-11, Vol.50 (11), p.2474-2479

2002

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A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.272-277

2003

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Cultivating Excellence: Formalizing Street Food Enterprises in Bangladesh through Quality Management and Customer Relationship Strategies

International Journal of Social Science and Human Research, 2024-07, Vol.7 (7)

2024

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Bias dependence of high-frequency noise in heterojunction bipolar transistors

IEEE transactions on microwave theory and techniques, 2003-03, Vol.51 (3), p.677-683

2003

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Base transit time in abrupt GaN/InGaN/GaN HBT's

IEEE transactions on electron devices, 2000-04, Vol.47 (4), p.662-666

2000

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AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

Solid-state electronics, 2006-06, Vol.50 (6), p.1051-1056

2006

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Schottky barrier height in GaN/AlGaN heterostructures

Solid-state electronics, 2006-06, Vol.50 (6), p.1041-1045

2006

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Temperature dependent transport properties in GaN, AlxGa 1-xN, and InxGa1-xN semiconductors

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.567

2001

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Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.567-572

2001

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Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers

Solid-state electronics, 2003-02, Vol.47 (2), p.339-344

2003

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Growth parameter dependence of gain compression in AlGaN/GaN HFETs

Solid-state electronics, 2004-10, Vol.48 (10), p.1849-1853

2004

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High frequency GaN/AlGaN HEMT class-E power amplifier

Solid-state electronics, 2002-10, Vol.46 (10), p.1621-1625

2002

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A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs

Solid-state electronics, 2003-05, Vol.47 (5), p.763-768

2003

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Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures

Solid-state electronics, 1998-11, Vol.42 (11), p.2101-2104

1998

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Effects of impurity traps on gate current and trapped charge in MOSFETs

Solid-state electronics, 2003-02, Vol.47 (2), p.333-337

2003

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Frequency dependence of GaN/AlGaN HEMT amplifier using time-domain analysis

Solid-state electronics, 2002-10, Vol.46 (10), p.1507-1511

2002

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Temperature Dependent Transport Parameters in Short GaN Structures

Physica status solidi. B. Basic research, 2001-11, Vol.228 (2), p.575-578

2001

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Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.267-270 vol.1

2002

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Energy bandgap of Al xGa 1− xAs 1− ySb y and conduction band discontinuity of Al xGa 1− xAs 1− ySb y/InAs and Al xGa 1− xAs 1− ySb y/InGaAs heterostructures

Solid-state electronics, 1998, Vol.42 (11), p.2101-2104

1998

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Noise performance of Si/Si/sub 1-x/Ge/sub x/ FETs

IEEE transactions on electron devices, 1995-10, Vol.42 (10), p.1841-1846

1995

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Electron escape time from single quantum wells

IEEE journal of quantum electronics, 1997-02, Vol.33 (2), p.187-191

1997

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Self-heating and trapping effects on the RF performance of GaN MESFETs

Impact ionization in InAlAs/InGaAs/InAlAs HEMT's

A physics-based frequency dispersion model of GaN MESFETs

A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series

Nonlinear analysis of GaN MESFETs with Volterra series using large-signal models including trapping effects

A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors

Cultivating Excellence: Formalizing Street Food Enterprises in Bangladesh through Quality Management and Customer Relationship Strategies

Bias dependence of high-frequency noise in heterojunction bipolar transistors

Base transit time in abrupt GaN/InGaN/GaN HBT's

AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

Schottky barrier height in GaN/AlGaN heterostructures

Temperature dependent transport properties in GaN, AlxGa 1-xN, and InxGa1-xN semiconductors

Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors

Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers

Growth parameter dependence of gain compression in AlGaN/GaN HFETs

High frequency GaN/AlGaN HEMT class-E power amplifier

A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs

Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures

Effects of impurity traps on gate current and trapped charge in MOSFETs

Frequency dependence of GaN/AlGaN HEMT amplifier using time-domain analysis

Temperature Dependent Transport Parameters in Short GaN Structures

Large-signal modeling of GaN FET and nonlinearity analysis using Volterra series

Energy bandgap of Al xGa 1− xAs 1− ySb y and conduction band discontinuity of Al xGa 1− xAs 1− ySb y/InAs and Al xGa 1− xAs 1− ySb y/InGaAs heterostructures

Noise performance of Si/Si/sub 1-x/Ge/sub x/ FETs

Electron escape time from single quantum wells

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