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Third-generation infrared photodetector arrays

Journal of applied physics, 2009-05, Vol.105 (9), p.091101-091101-44

2009

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New concepts in infrared photodetector designs

Applied physics reviews, 2014-12, Vol.1 (4), p.41102

2014

Volltextzugriff (PDF)

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Journal of electronic materials, 2022-09, Vol.51 (9), p.4742-4751

2022

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GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe

Journal of electronic materials, 2014-08, Vol.43 (8), p.2788-2794

2014

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MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

Journal of electronic materials, 2015-09, Vol.44 (9), p.3180-3187

2015

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Random dopant fluctuations and statistical variability in n-channel junctionless FETs

Nanotechnology, 2018-01, Vol.29 (2), p.025203-025203

2018

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Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

Journal of electronic materials, 2022-09, Vol.51 (9), p.4869-4883

2022

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MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors

Journal of crystal growth, 2017-06, Vol.468, p.216-219

2017

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Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

Journal of electronic materials, 2016-09, Vol.45 (9), p.4596-4602

2016

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A method of removing the valence band discontinuity in HgCdTe-based nBn detectors

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications

Journal of electronic materials, 2019-10, Vol.48 (10), p.6159-6168

2019

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MBE-growth of CdTe on GaSb substrates: A case study on the influence of substrate quality

Materials chemistry and physics, 2018-08, Vol.214, p.285-290

2018

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Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

Journal of electronic materials, 2015-01, Vol.44 (1), p.158-166

2015

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High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials

Journal of electronic materials, 2012-10, Vol.41 (10), p.2816-2823

2012

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Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

Applied physics letters, 2015-11, Vol.107 (18)

2015

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Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

Journal of electronic materials, 2013-11, Vol.42 (11), p.3108-3113

2013

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Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

New journal of physics, 2014-11, Vol.16 (11), p.113033-15

2014

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Mobility spectrum analysis of carrier transport at insulator/semiconductor interfaces

Microelectronic engineering, 2013-09, Vol.109, p.232-235

2013

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Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation

Journal of electronic materials, 2015-09, Vol.44 (9), p.2990-3001

2015

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Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces

Microelectronic engineering, 2015-11, Vol.147, p.137-140

2015

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Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

Journal of applied physics, 2000-04, Vol.87 (8), p.3900-3904

2000

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Investigation of Multicarrier Transport in LPE-Grown Hg1−xCdxTe Layers

Journal of electronic materials, 2010-07, Vol.39 (7), p.1023-1029

2010

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Electron Transport in InAsSb-Based nBn Photodetector Structures

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.510-512

2013

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Third-generation infrared photodetector arrays

New concepts in infrared photodetector designs

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe

MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

Random dopant fluctuations and statistical variability in n-channel junctionless FETs

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors

Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

A method of removing the valence band discontinuity in HgCdTe-based nBn detectors

Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications

MBE-growth of CdTe on GaSb substrates: A case study on the influence of substrate quality

Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors

High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials

Minority carrier lifetime in iodine-doped molecular beam epitaxy-grown HgCdTe

Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

Mobility spectrum analysis of carrier transport at insulator/semiconductor interfaces

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivation

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Hall-effect characterization of electron transport at SiO2/4H-SiC MOS interfaces

Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

Investigation of Multicarrier Transport in LPE-Grown Hg1−xCdxTe Layers

Electron Transport in InAsSb-Based nBn Photodetector Structures

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