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InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1020-1026

2016

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.3745-3751

2002

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain

IEEE electron device letters, 2005-05, Vol.26 (5), p.314-316

2005

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2268-2279

2001

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High quality Ge on Si by epitaxial necking

Applied physics letters, 2000-06, Vol.76 (25), p.3700-3702

2000

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Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Applied physics letters, 2002-03, Vol.80 (11), p.2014-2016

2002

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

IEEE electron device letters, 2008-09, Vol.29 (9), p.1074-1077

2008

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Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

Journal of applied physics, 2010-12, Vol.108 (12), p.124303-124303-5

2010

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Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1523-1533

2011

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Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

IEEE electron device letters, 2006-03, Vol.27 (3), p.175-178

2006

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A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1208-1212

2019

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Traps in germanium nanocrystal memory and effect on charge retention: Modeling and experimental measurements

Journal of applied physics, 2005-06, Vol.97 (12), p.124305-124305-9

2005

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Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

Thin solid films, 2006-05, Vol.504 (1), p.149-152

2006

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Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Applied physics letters, 2001-12, Vol.79 (25), p.4246-4248

2001

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Strain relaxation in patterned strained silicon directly on insulator structures

Applied physics letters, 2005-12, Vol.87 (25), p.251926-251926-3

2005

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Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1396-1402

2002

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Measurement and modeling of self-heating in SOI nMOSFET's

IEEE transactions on electron devices, 1994-01, Vol.41 (1), p.69-75

1994

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Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

Journal of applied physics, 2005-08, Vol.98 (3), p.033520-033520-6

2005

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Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

IBM journal of research and development, 2006-07, Vol.50 (4.5), p.363-376

2006

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Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

Journal of applied physics, 2002-07, Vol.92 (1), p.214-217

2002

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On Backscattering and Mobility in Nanoscale Silicon MOSFETs

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2762-2769

2009

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Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

Applied physics letters, 2002-11, Vol.81 (19), p.3639-3641

2002

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On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

IEEE electron device letters, 2001-02, Vol.22 (2), p.95-97

2001

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Fabrication of ultra-thin strained silicon on insulator

Journal of electronic materials, 2003-09, Vol.32 (9), p.972-975

2003

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InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain

Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

High quality Ge on Si by epitaxial necking

Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

Traps in germanium nanocrystal memory and effect on charge retention: Modeling and experimental measurements

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Strain relaxation in patterned strained silicon directly on insulator structures

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

Measurement and modeling of self-heating in SOI nMOSFET's

Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

Fabrication of ultra-thin strained silicon on insulator

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