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InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1020-1026

2016

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IEEE_Xplore

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.3745-3751

2002

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Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain

IEEE electron device letters, 2005-05, Vol.26 (5), p.314-316

2005

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IEEE_Xplore

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-11, Vol.19 (6), p.2268-2279

2001

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High quality Ge on Si by epitaxial necking

Applied physics letters, 2000-06, Vol.76 (25), p.3700-3702

2000

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Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Applied physics letters, 2002-03, Vol.80 (11), p.2014-2016

2002

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

IEEE electron device letters, 2008-09, Vol.29 (9), p.1074-1077

2008

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IEEE_Xplore

Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

Journal of applied physics, 2010-12, Vol.108 (12), p.124303-124303-5

2010

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Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1523-1533

2011

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IEEE_Xplore

Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

IEEE electron device letters, 2006-03, Vol.27 (3), p.175-178

2006

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Traps in germanium nanocrystal memory and effect on charge retention: Modeling and experimental measurements

Journal of applied physics, 2005-06, Vol.97 (12), p.124305-124305-9

2005

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A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1208-1212

2019

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IEEE_Xplore

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

Thin solid films, 2006-05, Vol.504 (1), p.149-152

2006

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Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Applied physics letters, 2001-12, Vol.79 (25), p.4246-4248

2001

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Strain relaxation in patterned strained silicon directly on insulator structures

Applied physics letters, 2005-12, Vol.87 (25), p.251926-251926-3

2005

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Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1396-1402

2002

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IEEE_Xplore

Measurement and modeling of self-heating in SOI nMOSFET's

IEEE transactions on electron devices, 1994-01, Vol.41 (1), p.69-75

1994

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IEEE_Xplore

Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

Journal of applied physics, 2005-08, Vol.98 (3), p.033520-033520-6

2005

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On Backscattering and Mobility in Nanoscale Silicon MOSFETs

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2762-2769

2009

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IEEE_Xplore

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

Applied physics letters, 2002-11, Vol.81 (19), p.3639-3641

2002

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On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

IEEE electron device letters, 2001-02, Vol.22 (2), p.95-97

2001

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IEEE_Xplore

Fabrication of ultra-thin strained silicon on insulator

Journal of electronic materials, 2003-09, Vol.32 (9), p.972-975

2003

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Thermal reaction of nickel and Si0.75Ge0.25 alloy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-11, Vol.20 (6), p.1903-1910

2002

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Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Applied physics letters, 2003-08, Vol.83 (5), p.875-877

2003

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InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

High quality Ge on Si by epitaxial necking

Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate

Traps in germanium nanocrystal memory and effect on charge retention: Modeling and experimental measurements

A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts

Hole mobility enhancements in strained Si/Si1−yGey p -type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x<y) virtual substrates

Strain relaxation in patterned strained silicon directly on insulator structures

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

Measurement and modeling of self-heating in SOI nMOSFET's

Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure

On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

Fabrication of ultra-thin strained silicon on insulator

Thermal reaction of nickel and Si0.75Ge0.25 alloy

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

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