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Analysis of optical gain threshold in n-doped and tensile-strained germanium heterostructure diodes

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Direct and indirect band gap room temperature electroluminescence of Ge diodes

Journal of applied physics, 2010-07, Vol.108 (2), p.023105-023105-4

2010

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Tensile-strained germanium microdisk electroluminescence

Optics express, 2015-03, Vol.23 (5), p.6722-6730

2015

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Schottky electroluminescent diodes with n-doped germanium

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Procedure to derive analytical models for microwave noise performances of Si SiGe:C and InP InGaAs heterojunction bipolar transistors

Semiconductor science and technology, 2013-04, Vol.28 (4), p.45003

2013

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Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating

Journal of infrared, millimeter and terahertz waves, 2016-03, Vol.37 (3), p.243-257

2016

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Coupling 3-D Maxwell's and Boltzmann's equations for analyzing a terahertz photoconductive switch

IEEE transactions on microwave theory and techniques, 2005-09, Vol.53 (9), p.2991-2998

2005

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Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

Thin solid films, 2010-02, Vol.518 (9), p.2437-2441

2010

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Influence of temperature on transit times and microwave noise performances of SiGe HBT

Semiconductor science and technology, 2016-03, Vol.31 (3), p.35020

2016

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230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

IEEE journal of solid-state circuits, 2005-10, Vol.40 (10), p.2025-2034

2005

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Optimal structure for resonant THz detection of plasmons-polaritons in the 2D quantum wells

2012 7th European Microwave Integrated Circuit Conference, 2012-12, Vol.109 (4), p.80-83

2012

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Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP InGaAs HBTs

Semiconductor science and technology, 2012-08, Vol.27 (8), p.85005

2012

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Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si SiGe:C and InP InGaAs HBTs

Semiconductor science and technology, 2012-06, Vol.27 (6), p.65016

2012

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Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Semiconductor science and technology, 2014-09, Vol.29 (9), p.95020

2014

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500GHz cutoff frequency SiGe HBTs

Electronics letters, 2007-07, Vol.43 (14), p.774-775

2007

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SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Solid-state electronics, 2011-07, Vol.61 (1), p.58-64

2011

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Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Applied physics letters, 2000-09, Vol.77 (12), p.1822-1824

2000

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Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012037

2009

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Minority electron mobilities in GaAs, In 0.53 Ga 0.47 As , and GaAs 0.50 Sb 0.50 calculated within an ensemble Monte Carlo model

Journal of applied physics, 2011-02, Vol.109 (3), p.033716-033716-10

2011

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SiGe heterojunction bipolar transistor issues towards high cryogenic performances

Cryogenics (Guildford), 2009-11, Vol.49 (11), p.620-625

2009

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500 GHz cutoff frequency SiGe HBTs

Electronics letters, 2007, Vol.43 (14), p.774-775

2007

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Coplanar waveguides on BCB measured up to 760 GHz

Journal of electromagnetic waves and applications, 2021-10, Vol.35 (15), p.2051-2061

2021

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Comparative Study of Three Wave Propagation Software Programs for the Modeling of Coupled Maxwell and Boltzmann Equations at THz Frequency

Applied Computational Electromagnetics Society journal, 2009-08, Vol.24 (4), p.382

2009

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Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs

Applied physics letters, 2002-06, Vol.80 (25), p.4711-4713

2002

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Analysis of optical gain threshold in n-doped and tensile-strained germanium heterostructure diodes

Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model

Direct and indirect band gap room temperature electroluminescence of Ge diodes

Tensile-strained germanium microdisk electroluminescence

Schottky electroluminescent diodes with n-doped germanium

Procedure to derive analytical models for microwave noise performances of Si SiGe:C and InP InGaAs heterojunction bipolar transistors

Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating

Coupling 3-D Maxwell's and Boltzmann's equations for analyzing a terahertz photoconductive switch

Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

Influence of temperature on transit times and microwave noise performances of SiGe HBT

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

Optimal structure for resonant THz detection of plasmons-polaritons in the 2D quantum wells

Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP InGaAs HBTs

Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si SiGe:C and InP InGaAs HBTs

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

500GHz cutoff frequency SiGe HBTs

SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

Minority electron mobilities in GaAs, In 0.53 Ga 0.47 As , and GaAs 0.50 Sb 0.50 calculated within an ensemble Monte Carlo model

SiGe heterojunction bipolar transistor issues towards high cryogenic performances

500 GHz cutoff frequency SiGe HBTs

Coplanar waveguides on BCB measured up to 760 GHz

Comparative Study of Three Wave Propagation Software Programs for the Modeling of Coupled Maxwell and Boltzmann Equations at THz Frequency

Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs

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