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Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT

Frontiers in materials, 2022-08, Vol.9

2022

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InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy

Materials research express, 2021-02, Vol.8 (2), p.26404

2021

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Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy

Japanese Journal of Applied Physics, 2017-03, Vol.56 (3), p.35505-035505

2017

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Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy

Semiconductor science and technology, 2015-10, Vol.30 (12), p.125001

2015

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InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.618-621

2013

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InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.525-528

2011

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InGaAsBi materials grown by gas source molecular beam epitaxy

Journal of crystal growth, 2017-11, Vol.477, p.135-138

2017

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Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

Journal of materials science, 2018-03, Vol.53 (5), p.3537-3543

2018

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An InGaAs/InP 40 GHz CML static frequency divider

Journal of semiconductors, 2011-03, Vol.32 (3), p.035008-1-4

2011

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Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors

Journal of crystal growth, 2007-04, Vol.301, p.212-216

2007

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Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz

Journal of semiconductors, 2009-01, Vol.30 (1), p.014002-014002 (3)

2009

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Effects of head models and dipole source parameters on EEG fields

The open biomedical engineering journal, 2015, Vol.9 (1), p.10-16

2015

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GSMBE growth of InGaAsP step-graded composite collector structure applied to DHBT

2015 International Conference on Optoelectronics and Microelectronics (ICOM), 2015, p.330-333

2015

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Compound semiconductor nanotube materials grown and fabricated

Nanoscale research letters, 2011-12, Vol.6 (1), p.627-627, Article 627

2011

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InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE

Rare metals, 2006-12, Vol.25 (6), p.20-23

2006

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Ultra high-speed InP/InGaAs SHBTs with/t and/max of 185 GHz

Journal of semiconductors, 2010-09, Vol.31 (9), p.094007

2010

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Ultra high-speed InP/InGaAs DHBTs with f t of 203 GHz

Journal of semiconductors, 2009-01, Vol.30 (1), p.14002

2009

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InGaAs/InP Heterostructural Materials for Opto-Electronic Integrated CircuitReceiver Application Grown by Gas Source Molecular Beam Epitaxy

Journal of the Korean Physical Society, 2005, 46(2), , pp.229-232

2005

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Comparison of EEG Forward Solutions in Two Head Models

2011 International Conference on Multimedia and Signal Processing, 2011, Vol.2, p.193-197

2011

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InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE

稀有金属(英文版), 2006, Vol.25 (z2), p.20-23

2006

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178GHz InP/InGaAs HBT with /spl mu/-bridge

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.872-874

2006

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Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

Frontiers of Optoelectronics (Online), 2008, Vol.1 (3-4), p.336-340

2008

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Removal mechanism of Pb(II) by Penicillium polonicum: immobilization, adsorption, and bioaccumulation

Scientific reports, 2020-06, Vol.10 (1), p.9079, Article 9079

2020

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Photocatalytic oxidation of dissolved Mn(II) on natural iron oxide minerals

Geochimica et cosmochimica acta, 2021-11, Vol.312, p.343-356

2021

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Photoelectric conversion on Earth’s surface via widespread Fe- and Mn-mineral coatings

Proceedings of the National Academy of Sciences - PNAS, 2019-05, Vol.116 (20), p.9741-9746

2019

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Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT

InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy

Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy

Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy

InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy

InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

InGaAsBi materials grown by gas source molecular beam epitaxy

Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

An InGaAs/InP 40 GHz CML static frequency divider

Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors

Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz

Effects of head models and dipole source parameters on EEG fields

GSMBE growth of InGaAsP step-graded composite collector structure applied to DHBT

Compound semiconductor nanotube materials grown and fabricated

InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE

Ultra high-speed InP/InGaAs SHBTs with/t and/max of 185 GHz

Ultra high-speed InP/InGaAs DHBTs with f t of 203 GHz

InGaAs/InP Heterostructural Materials for Opto-Electronic Integrated CircuitReceiver Application Grown by Gas Source Molecular Beam Epitaxy

Comparison of EEG Forward Solutions in Two Head Models

InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE

178GHz InP/InGaAs HBT with /spl mu/-bridge

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

Removal mechanism of Pb(II) by Penicillium polonicum: immobilization, adsorption, and bioaccumulation

Photocatalytic oxidation of dissolved Mn(II) on natural iron oxide minerals

Photoelectric conversion on Earth’s surface via widespread Fe- and Mn-mineral coatings

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