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Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

IEEE electron device letters, 2006-05, Vol.27 (5), p.412-415

Ang, D.S.

2006

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IEEE_Xplore

Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

IEEE electron device letters, 2006-11, Vol.27 (11), p.914-916

2006

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IEEE_Xplore

Ultrafast Measurement on NBTI

IEEE electron device letters, 2009-03, Vol.30 (3), p.275-277

2009

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IEEE_Xplore

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

IEEE electron device letters, 2005-12, Vol.26 (12), p.906-908

2005

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IEEE_Xplore

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

IEEE electron device letters, 2006-09, Vol.27 (9), p.755-758

2006

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IEEE_Xplore

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.751-753

2009

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IEEE_Xplore

Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

IEEE electron device letters, 2004-09, Vol.25 (9), p.637-639

2004

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IEEE_Xplore

Role of Nitrogen on the Gate Length Dependence of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.772-774

2009

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IEEE_Xplore

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

IEEE electron device letters, 2008-08, Vol.29 (8), p.934-937

2008

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IEEE_Xplore

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2490-2498

2003

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IEEE_Xplore

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

IEEE electron device letters, 2003-07, Vol.24 (7), p.469-471

2003

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IEEE_Xplore

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

IEEE electron device letters, 2000-08, Vol.21 (8), p.411-413

2000

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IEEE_Xplore

Percolation resistance evolution during progressive breakdown in narrow MOSFETs

IEEE electron device letters, 2006-05, Vol.27 (5), p.396-398

2006

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IEEE_Xplore

A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

IEEE electron device letters, 2001-11, Vol.22 (11), p.553-555

Ang, D.S.

2001

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IEEE_Xplore

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

IEEE electron device letters, 2003-09, Vol.24 (9), p.598-600

2003

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IEEE_Xplore

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2246-2248

2004

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IEEE_Xplore

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

IEEE electron device letters, 2004-06, Vol.25 (6), p.417-419

2004

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IEEE_Xplore

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2254-2262

2002

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IEEE_Xplore

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

IEEE electron device letters, 2001-11, Vol.22 (11), p.545-547

2001

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IEEE_Xplore

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.650-652

2000

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IEEE_Xplore

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.738-746

1999

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IEEE_Xplore

Evolution of oxide charge trapping under bias temperature stressing

Microelectronics and reliability, 2014-04, Vol.54 (4), p.663-681

2014

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On the dynamic NBTI of the HfO 2 and HfSiON P–MOSFET

Microelectronic engineering, 2011, Vol.88 (7), p.1392-1395

2011

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On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Microelectronic engineering, 2011-07, Vol.88 (7), p.1392-1395

2011

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Bilayer gate dielectric study by scanning tunneling microscopy

Applied physics letters, 2007-09, Vol.91 (10), p.102905-102905-3

2007

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Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

Ultrafast Measurement on NBTI

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric

Role of Nitrogen on the Gate Length Dependence of NBTI

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

Percolation resistance evolution during progressive breakdown in narrow MOSFETs

A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

Evolution of oxide charge trapping under bias temperature stressing

On the dynamic NBTI of the HfO 2 and HfSiON P–MOSFET

On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Bilayer gate dielectric study by scanning tunneling microscopy

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