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Oxidative stress in renal dysfunction: mechanisms, clinical sequelae and therapeutic options

Journal of human hypertension, 2010-01, Vol.24 (1), p.1-8

2010

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Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch

Applied physics letters, 2017-07, Vol.111 (4)

2017

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White-light-induced disruption of nanoscale conducting filament in hafnia

Applied physics letters, 2015-08, Vol.107 (7)

2015

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Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3133-3136

2012

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IEEE_Xplore

Separation of Hole Trapping and Interface-State Generation by Ultrafast Measurement on Dynamic Negative-Bias Temperature Instability

IEEE electron device letters, 2010-07, Vol.31 (7), p.656-658

2010

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IEEE_Xplore

Bimodal Weibull Distribution of Metal/High- \kappa Gate Stack TDDB-Insights by Scanning Tunneling Microscopy

IEEE electron device letters, 2012-02, Vol.33 (2), p.146-148

2012

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IEEE_Xplore

A comparison between B-type natriuretic peptide, Global Registry of Acute Coronary Events (GRACE) score and their combination in ACS risk stratification

Heart (British Cardiac Society), 2009-11, Vol.95 (22), p.1836-1842

2009

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The prognostic value of the ECG in hypertension: where are we now?

Journal of human hypertension, 2008-07, Vol.22 (7), p.460-467

2008

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Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

IEEE electron device letters, 2006-11, Vol.27 (11), p.914-916

2006

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IEEE_Xplore

Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability

IEEE electron device letters, 2012-04, Vol.33 (4), p.486-488

2012

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IEEE_Xplore

Are Interface State Generation and Positive Oxide Charge Trapping Under Negative-Bias Temperature Stressing Correlated or Coupled?

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1013-1022

2012

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IEEE_Xplore

Ultrafast Measurement on NBTI

IEEE electron device letters, 2009-03, Vol.30 (3), p.275-277

2009

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IEEE_Xplore

Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

IEEE electron device letters, 2006-05, Vol.27 (5), p.412-415

Ang, D.S.

2006

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IEEE_Xplore

On the area scalability of valence-change memristors for neuromorphic computing

Applied physics letters, 2019-10, Vol.115 (17)

2019

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Evolution of oxide charge trapping under bias temperature stressing

Microelectronics and reliability, 2014-04, Vol.54 (4), p.663-681

2014

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Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy

Applied physics letters, 2013-05, Vol.102 (20)

2013

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Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

IEEE electron device letters, 2005-12, Vol.26 (12), p.906-908

2005

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IEEE_Xplore

Threshold Voltage and Mobility Extraction by Ultrafast Switching Measurement on NBTI

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.2027-2031

2010

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IEEE_Xplore

Increased Deep-Level Hole Trapping by Combined Negative-Bias Temperature and Channel Hot-Hole Stress

IEEE electron device letters, 2011-10, Vol.32 (10), p.1337-1339

2011

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IEEE_Xplore

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

Journal of physics. D, Applied physics, 2017-09, Vol.50 (38), p.385102

2017

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Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

IEEE electron device letters, 2006-09, Vol.27 (9), p.755-758

2006

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IEEE_Xplore

Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack

Applied physics letters, 2018-05, Vol.112 (21)

2018

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Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

Applied physics letters, 2016-02, Vol.108 (8)

2016

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Oxidative stress in renal dysfunction: mechanisms, clinical sequelae and therapeutic options

Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch

White-light-induced disruption of nanoscale conducting filament in hafnia

Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing

Separation of Hole Trapping and Interface-State Generation by Ultrafast Measurement on Dynamic Negative-Bias Temperature Instability

Bimodal Weibull Distribution of Metal/High- \kappa Gate Stack TDDB-Insights by Scanning Tunneling Microscopy

A comparison between B-type natriuretic peptide, Global Registry of Acute Coronary Events (GRACE) score and their combination in ACS risk stratification

The prognostic value of the ECG in hypertension: where are we now?

Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability

Are Interface State Generation and Positive Oxide Charge Trapping Under Negative-Bias Temperature Stressing Correlated or Coupled?

Ultrafast Measurement on NBTI

Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study

Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

On the area scalability of valence-change memristors for neuromorphic computing

Evolution of oxide charge trapping under bias temperature stressing

Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Threshold Voltage and Mobility Extraction by Ultrafast Switching Measurement on NBTI

Increased Deep-Level Hole Trapping by Combined Negative-Bias Temperature and Channel Hot-Hole Stress

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

Argon-plasma-controlled optical reset in the SiO2/Cu filamentary resistive memory stack

Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

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