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A finite-element study of strain fields in vertically aligned InAs islands in GaAs

Journal of applied physics, 1999-08, Vol.86 (4), p.1945-1950

1999

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Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition

Applied physics letters, 2010-05, Vol.96 (19)

2010

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Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

Journal of applied physics, 2003-04, Vol.93 (7), p.4219-4225

2003

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Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

Journal of applied physics, 1996-09, Vol.80 (5), p.2763-2767

1996

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Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers

Journal of crystal growth, 2003-04, Vol.251 (1), p.112-117

2003

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Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Applied physics letters, 2011-04, Vol.98 (16), p.161903-161903-3

2011

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Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands

Ultramicroscopy, 2002-11, Vol.93 (2), p.161-167

2002

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Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Journal of crystal growth, 2003-04, Vol.251 (1), p.822-826

2003

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High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)

Journal of applied physics, 1999-08, Vol.86 (4), p.1988-1993

1999

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A transmission electron microscopy study of composition in Si1-xGex/Si (001) quantum dots

Philosophical magazine (Abingdon, England), 2007-04, Vol.87 (10), p.1531-1543

2007

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Periodic antiphase boundary spinel-based structures in aluminates, gallates, aluminium oxynitrides and transition aluminas

Philosophical magazine (Abingdon, England), 2005-07, Vol.85 (20), p.2211-2225

2005

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LACBED measurement of the chemical composition of a thin InxGa1-x as layer buried in a GaAs matrix

Ultramicroscopy, 2001-11, Vol.89 (4), p.299-303

2001

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Determination of the composition of coherently strained islands by transmission electron microscopy

Applied surface science, 2001-06, Vol.177 (4), p.258-262

2001

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Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

Journal of applied physics, 2010-01, Vol.107 (1)

2010

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Fully relaxed low-mismatched InAlAs layer on an InP substrateby using a two step buffer

Journal of applied physics, 2010-01, Vol.107 (1), p.016102-016102-3

2010

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Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots

Philosophical magazine letters, 1999-04, Vol.79 (4), p.201-208

Androussi, Y.

1999

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Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

Applied physics letters, 1994-08, Vol.65 (9), p.1162-1164

1994

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Nanometric Scale Investigation of Local Strain in GaInAs Islands by High Resolution and Analytical TEM

Microscopy and microanalysis, 2002-08, Vol.8 (4), p.312-318

2002

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Optical and microstructural properties versus indium content in In x Ga 1 − x N films grown by metal organic chemical vapor deposition

Applied physics letters, 2010-05, Vol.96 (19), p.191909-191909-3

2010

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Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures

Journal of crystal growth, 1996-11, Vol.169 (2), p.209-216

1996

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Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures

Applied physics letters, 1995-06, Vol.66 (25), p.3450-3452

1995

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Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)

Journal of crystal growth, 1997-08, Vol.179 (3-4), p.331-338

1997

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A transmission electron microscopy study of composition in Si(1-x)Ge(x)(si(001) quantum dots

Philosophical magazine (Abingdon, England), 2007-04, Vol.87 (10), p.1531-1544

2007

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A transmission electron microscopy study of composition in Si1− x Ge x /Si (001) quantum dots

Philosophical magazine (Abingdon, England), 2007-04, Vol.87 (10), p.1531-1543

2007

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A transmission electron microscopy study of composition in Si 1− x Ge x /Si (001) quantum dots

Philosophical magazine (Abingdon, England), 2007-04, Vol.87 (10), p.1531-1543

2007

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A finite-element study of strain fields in vertically aligned InAs islands in GaAs

Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition

Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001)

A transmission electron microscopy study of composition in Si1-xGex/Si (001) quantum dots

Periodic antiphase boundary spinel-based structures in aluminates, gallates, aluminium oxynitrides and transition aluminas

LACBED measurement of the chemical composition of a thin InxGa1-x as layer buried in a GaAs matrix

Determination of the composition of coherently strained islands by transmission electron microscopy

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

Fully relaxed low-mismatched InAlAs layer on an InP substrateby using a two step buffer

Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots

Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

Nanometric Scale Investigation of Local Strain in GaInAs Islands by High Resolution and Analytical TEM

Optical and microstructural properties versus indium content in In x Ga 1 − x N films grown by metal organic chemical vapor deposition

Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures

Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures

Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)

A transmission electron microscopy study of composition in Si(1-x)Ge(x)(si(001) quantum dots

A transmission electron microscopy study of composition in Si1− x Ge x /Si (001) quantum dots

A transmission electron microscopy study of composition in Si 1− x Ge x /Si (001) quantum dots

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