UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 417

Sortiert nach

Constraints on effusive cryovolcanic eruptions on Europa using topography obtained from Galileo images

Icarus (New York, N.Y. 1962), 2021-06, Vol.361, p.114373, Article 114373

2021

Link zum Volltext

Verfügbarkeit prüfen

Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3274-3281

2014

Link zum Volltext
IEEE_Xplore

Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4248-4253

2022

Link zum Volltext
IEEE_Xplore

Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.982-989

2016

Link zum Volltext
IEEE_Xplore

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Physica status solidi. A, Applications and materials science, 2022-07, Vol.219 (13), p.n/a

2022

Link zum Volltext

Verfügbarkeit prüfen

Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

IEEE electron device letters, 2012-12, Vol.33 (12), p.1717-1719

2012

Link zum Volltext
IEEE_Xplore

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2583-2589

2013

Link zum Volltext
IEEE_Xplore

Fully Depleted SOI Characterization by Capacitance Analysis of p-i-n Gated Diodes

IEEE electron device letters, 2015-01, Vol.36 (1), p.5-7

2015

Link zum Volltext
IEEE_Xplore

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.1161-1167

2014

Link zum Volltext
IEEE_Xplore

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1410-1417

2019

Link zum Volltext
IEEE_Xplore

Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons

Communications engineering, 2024-06, Vol.3 (1), p.80-15, Article 80

2024

Link zum Volltext

Verfügbarkeit prüfen

Extended MASTAR Modeling of DIBL in UTB and UTBB SOI MOSFETs

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.247-251

2012

Link zum Volltext
IEEE_Xplore

Editorial Special Section on ESSDERC

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4558-4558

2020

Link zum Volltext
IEEE_Xplore

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks

Advanced electronic materials, 2022-08, Vol.8 (8), p.n/a

2022

Link zum Volltext

Verfügbarkeit prüfen

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.969-975

2014

Link zum Volltext
IEEE_Xplore

Binary ReRAM-based BNN first-layer implementation

2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2023, p.1-6

2023

Link zum Volltext
IEEE_Xplore

Combining Accuracy and Plasticity in Convolutional Neural Networks Based on Resistive Memory Arrays for Autonomous Learning

IEEE journal on exploratory solid-state computational devices and circuits, 2021-12, Vol.7 (2), p.132-140

2021

Link zum Volltext

Verfügbarkeit prüfen

Retrieving the characteristics of slab ice covering snow by remote sensing

The cryosphere, 2016-09, Vol.10 (5), p.2113-2128

2016

Link zum Volltext

Verfügbarkeit prüfen

Ice state evolution during spring in Richardson crater, Mars

Icarus (New York, N.Y. 1962), 2018-11, Vol.315, p.158-173

2018

Link zum Volltext

Verfügbarkeit prüfen

Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

IEEE electron device letters, 2012-08, Vol.33 (8), p.1102-1104

2012

Link zum Volltext
IEEE_Xplore

Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell

Nature communications, 2024-01, Vol.15 (1), p.741-741, Article 741

2024

Link zum Volltext

Verfügbarkeit prüfen

Radiative transfer model for contaminated rough slabs

Applied Optics, 2015-11, Vol.54 (31), p.9228-9241

2015

Link zum Volltext

Verfügbarkeit prüfen

Enhanced thermal performances of silicon-on-diamond wafers incorporating ultrathin nanocrystalline diamond and silicon layers: Raman and micro-Raman analysis

Journal of applied physics, 2011-10, Vol.110 (8), p.084901-084901-9

2011

Link zum Volltext

Verfügbarkeit prüfen

Experimental developments of A2RAM memory cells on SOI and bulk substrates

Solid-state electronics, 2015-01, Vol.103, p.7-14

2015

Link zum Volltext

Verfügbarkeit prüfen

On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2326-2336

2011

Link zum Volltext
IEEE_Xplore

1 – 25 von 417

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(348)
Mit Volltextzugriff
(386)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(255)
Life Sciences & Biomedicine
(154)
Humans
(124)
Life Sciences
(102)
Female
(80)
Technology
(72)
Male
(64)
Physical Sciences
(59)
Aged
(58)
Engineering
(56)
Physics
(51)
Engineering, Electrical & Electronic
(49)
Engineering Sciences
(43)
Physics, Applied
(35)
Biological And Medical Sciences
(33)
Geriatrics & Gerontology
(33)
Adult
(32)
Alzheimer's Disease
(32)
Aged, 80 And Over
(31)
Middle Aged
(30)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Constraints on effusive cryovolcanic eruptions on Europa using topography obtained from Galileo images

Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability

Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data

Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Fully Depleted SOI Characterization by Capacitance Analysis of p-i-n Gated Diodes

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

Analysis of Nanowire Field-Effect Transistors SET Response: Geometrical Considerations

Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons

Extended MASTAR Modeling of DIBL in UTB and UTBB SOI MOSFETs

Editorial Special Section on ESSDERC

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

Binary ReRAM-based BNN first-layer implementation

Combining Accuracy and Plasticity in Convolutional Neural Networks Based on Resistive Memory Arrays for Autonomous Learning

Retrieving the characteristics of slab ice covering snow by remote sensing

Ice state evolution during spring in Richardson crater, Mars

Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell

Radiative transfer model for contaminated rough slabs

Enhanced thermal performances of silicon-on-diamond wafers incorporating ultrathin nanocrystalline diamond and silicon layers: Raman and micro-Raman analysis

Experimental developments of A2RAM memory cells on SOI and bulk substrates

On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

Suchergebnisse filtern