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Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Applied physics letters, 2020-06, Vol.116 (23)

2020

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Deconvolution of the fluorescence spectra measured through a needle probe to assess the functional state of the liver

Lasers in surgery and medicine, 2023-09, Vol.55 (7), p.690-701

2023

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Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers

Crystal growth & design, 2021-03, Vol.21 (3), p.1666-1673

2021

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The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope

Nanoscale research letters, 2022-05, Vol.17 (1), p.52-52, Article 52

2022

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Detection of NADH and NADPH levels in vivo identifies shift of glucose metabolism in cancer to energy production

The FEBS journal, 2024-06, Vol.291 (12), p.2674-2682

2024

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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

Applied physics letters, 2024-07, Vol.125 (4)

2024

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Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

Nano research, 2022-03, Vol.15 (3), p.2405-2412

2022

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Fluorescence lifetime needle optical biopsy discriminates hepatocellular carcinoma

Biomedical optics express, 2022-02, Vol.13 (2), p.633-646

2022

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X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures

Semiconductor science and technology, 2020-07, Vol.35 (7), p.75009

2020

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Band Offsets of the MOCVD-Grown β‑(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

ACS applied materials & interfaces, 2022-07, Vol.14 (29), p.33944-33951

2022

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Band Offsets of the MOCVD-Grown β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 (010) Heterojunction

ACS applied materials & interfaces, 2022-07, Vol.14 (29), p.33944-33951

2022

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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

Materials & design, 2020-05, Vol.190, p.108565, Article 108565

2020

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Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Crystal growth & design, 2019-01, Vol.19 (1), p.200-210

2019

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Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

ACS applied materials & interfaces, 2018-02, Vol.10 (7), p.6755-6763

2018

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High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

Nanoscale research letters, 2015-02, Vol.10 (1), p.51-51, Article 51

2015

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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

Journal of applied physics, 2018-05, Vol.123 (19)

2018

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An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures

Journal of applied physics, 2016-11, Vol.120 (19)

2016

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The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Nanoscale research letters, 2016-12, Vol.11 (1), p.252-252, Article 252

2016

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X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires

Nanoscale research letters, 2016-12, Vol.11 (1), p.81-81, Article 81

2016

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Process analysis of a liquid-feed direct methanol fuel cell system

Journal of power sources, 2000-12, Vol.91 (2), p.193-201

2000

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Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

Materials science forum, 2014-02, Vol.778-780, p.697-701

2014

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Mobility, Telecommunication and Energy Regimes in Svalbard

Journal of Siberian Federal University. Humanities & Social Sciences, 2019-08, p.1506-1521

Vlakhov, Andrian V.

2019

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The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

Materials science forum, 2012-05, Vol.717-720, p.833-836

2012

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Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Deconvolution of the fluorescence spectra measured through a needle probe to assess the functional state of the liver

Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers

The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope

Detection of NADH and NADPH levels in vivo identifies shift of glucose metabolism in cancer to energy production

Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors

Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

Fluorescence lifetime needle optical biopsy discriminates hepatocellular carcinoma

X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si(100) heterostructures

Band Offsets of the MOCVD-Grown β‑(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

Band Offsets of the MOCVD-Grown β-(Al 0.21 Ga 0.79 ) 2 O 3 /β-Ga 2 O 3 (010) Heterojunction

Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers

Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires

Process analysis of a liquid-feed direct methanol fuel cell system

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

Mobility, Telecommunication and Energy Regimes in Svalbard

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

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