UB Paderborn / Katalog / Suche / in CDI

Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Journal of crystal growth, 2007-03, Vol.300 (1), p.79-82

2007

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Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Journal of crystal growth, 2005-05, Vol.278 (1), p.397-401

2005

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Study of degradation mechanism of blue light emitting diodes

Thin solid films, 2005-07, Vol.483 (1), p.378-381

2005

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Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Applied surface science, 2000-10, Vol.166 (1), p.309-312

2000

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Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

Journal of crystal growth, 1997-05, Vol.175-176, p.1016-1021

1997

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Nature of native oxide on GaN surface and its reaction with Al

Applied physics letters, 1996-11, Vol.69 (21), p.3212-3214

1996

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Solid state communications, 2007, Vol.142 (4), p.206-211

2007

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

Solid state communications, 2007-04, Vol.142 (4), p.206-211

2007

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Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Thin solid films, 2005-01, Vol.471 (1), p.336-341

2005

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Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Applied physics letters, 2005-10, Vol.87 (16), p.161901-161901-3

2005

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Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-12, Vol.145 (1-3), p.48-56

2007

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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Microelectronics, 2009-02, Vol.40 (2), p.360-362

2009

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Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001, Vol.308, p.93-97

2001

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Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.114-117

2007

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Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007, Vol.145 (1), p.48-56

2007

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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Journal of crystal growth, 2007-04, Vol.301 (SPEC. ISS.), p.457-460

2007

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Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Physica status solidi, 2007, Vol.244 (8), p.2892

2007

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Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Thin solid films, 2006-10, Vol.515 (2), p.603-606

2006

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Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Journal of applied physics, 2005-07, Vol.98 (1), p.016109-016109-3

2005

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Importance of ITO surface conditions for the interaction with thin CuPc layers

Organic electronics, 2005-08, Vol.6 (4), p.175-181

2005

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Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Applied surface science, 2004-03, Vol.226 (4), p.331-334

2004

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Cracks in GaN/AlN multiple quantum well structures grown by MBE

17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science, Stockholm, Sweden, 2008-03, Vol.100 (4), p.042026

2008

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Influence of dislocation density on photoluminescence intensity of GaN

Journal of crystal growth, 2005-05, Vol.278 (1), p.406-410

2005

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Diffusion of nitrogen in gallium arsenide

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.367-370

2003

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Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.93-97

2001

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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Study of degradation mechanism of blue light emitting diodes

Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

Nature of native oxide on GaN surface and its reaction with Al

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Importance of ITO surface conditions for the interaction with thin CuPc layers

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Influence of dislocation density on photoluminescence intensity of GaN

Diffusion of nitrogen in gallium arsenide

Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

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