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Optical absorption in plasma-deposited silicon oxynitride films

Applied physics letters, 1992-03, Vol.60 (11), p.1399-1401

1992

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Energie dispersive dans les semiconducteurs

physica status solidi (b), 1979-08, Vol.94 (2), p.557-568

Ance, C.

1979

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Composition, etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable NH3N2 gas mixture diluted with Helium

Thin solid films, 1991-08, Vol.203 (1), p.87-94

1991

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Reflectivity of GaSb-AlSb quantum-well structures in the range 2-5 eV

Journal of applied physics, 1989-10, Vol.66 (7), p.3088-3091

1989

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Spectre de photoémission de l'alliage ternaire Ga1−xAlxSb

physica status solidi (b), 1981-01, Vol.103 (1), p.441-449

1981

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Optical properties of plasma-enhanced chemical vapor deposited silicon-oxynitride films

Journal of applied physics, 1987-12, Vol.62 (11), p.4538-4544

1987

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Average energy gap in III-V semiconductors and ternary compounds

Journal of physics. C, Solid state physics, 1979-01, Vol.12, p.41

Ance, C

1979

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Optical transitions of GaSb-AlSb superlattice in the 2-5 eV range

Journal of applied physics, 1991-10, Vol.70 (7), p.4007-4008

1991

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Average energy gap in III-V semiconductors and ternary compounds

Journal of physics. C, Solid state physics, 1979-01, Vol.12 (1), p.41-51

Ance, C

1979

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Static refractive index of hydrogenated amorphous and polycrystalline silicon between 293 K and 973 K

Thin solid films, 1989-06, Vol.173 (2), p.155-161

1989

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Low-Temperature Reflectivity Spectra of AgGaS2 and AgGaSe2 Compounds

Physica status solidi. B. Basic research, 1986-12, Vol.138 (2), p.633-636

1986

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Variation des transitions optiques de Ga1−xAlx As et Ga1−xAlxSb

physica status solidi (b), 1979-03, Vol.92 (1), p.K33-K38

Ance, C.

1979

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Optical gap of hydrogenated amorphous and polycrystalline silicon between 4 and 973 K

Thin solid films, 1987-07, Vol.150 (2), p.181-188

1987

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Study of CdGeAs2 and CdGeP2 reflectivity structures in relation to zincblende spectra

Solid state communications, 1986-02, Vol.57 (8), p.649-652

1986

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Gap optique et indice de réfraction du silicium amorphe hydrogéné à 95 K et 295 K

Thin solid films, 1981-04, Vol.78 (3), p.207-215

1981

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Optical properties of the ternary compound Tl Sb S2

Solid state communications, 1986-09, Vol.59 (12), p.899-903

1986

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Temperature dependent optical absorption in hydrogenated silicon from amorphous to crystalline state

Journal of non-crystalline solids, 1987-05, Vol.91 (2), p.243-252

1987

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Calculation Model for Valence Electrons and Hydrogen Concentration in a-Si:H

physica status solidi (b), 1982-09, Vol.113 (1), p.105-111

1982

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Temperature effects on the optical properties of amorphous hydrogenated silicon nitrogen alloys prepared by RF sputtering

Journal of non-crystalline solids, 1987-12, Vol.94 (3), p.353-364

1987

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Penn-like model calculations application to hydrogenated amorphous silicon films prepared by glow discharge

physica status solidi (b), 1983-02, Vol.115 (2), p.347-352

1983

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Low-temperature optical properties of hydrogenated amorphous silicon

Materials letters, 1986-08, Vol.4 (8), p.343-349

1986

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Crystal-field and spin-orbit interactions at the fundamental gap of AgGaSe2 chalcopyrite compound

Journal of physics. C, Solid state physics, 1986-10, Vol.19 (29), p.5937-5943

1986

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Urbach tail and optical gap of G D a-Si:H films: Temperature and doping effects

Journal of non-crystalline solids, 1983-01, Vol.59, p.313-316

1983

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Polarizability Studies of Amorphous Silicon

Physica status solidi. B. Basic research, 1984-06, Vol.123 (2), p.611-618

1984

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Dispersion energy and oscillation strength in a-Si:H

Journal of non-crystalline solids, 1983-01, Vol.59, p.173-176

1983

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Optical absorption in plasma-deposited silicon oxynitride films

Energie dispersive dans les semiconducteurs

Composition, etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable NH3N2 gas mixture diluted with Helium

Reflectivity of GaSb-AlSb quantum-well structures in the range 2-5 eV

Spectre de photoémission de l'alliage ternaire Ga1−xAlxSb

Optical properties of plasma-enhanced chemical vapor deposited silicon-oxynitride films

Average energy gap in III-V semiconductors and ternary compounds

Optical transitions of GaSb-AlSb superlattice in the 2-5 eV range

Average energy gap in III-V semiconductors and ternary compounds

Static refractive index of hydrogenated amorphous and polycrystalline silicon between 293 K and 973 K

Low-Temperature Reflectivity Spectra of AgGaS2 and AgGaSe2 Compounds

Variation des transitions optiques de Ga1−xAlx As et Ga1−xAlxSb

Optical gap of hydrogenated amorphous and polycrystalline silicon between 4 and 973 K

Study of CdGeAs2 and CdGeP2 reflectivity structures in relation to zincblende spectra

Gap optique et indice de réfraction du silicium amorphe hydrogéné à 95 K et 295 K

Optical properties of the ternary compound Tl Sb S2

Temperature dependent optical absorption in hydrogenated silicon from amorphous to crystalline state

Calculation Model for Valence Electrons and Hydrogen Concentration in a-Si:H

Temperature effects on the optical properties of amorphous hydrogenated silicon nitrogen alloys prepared by RF sputtering

Penn-like model calculations application to hydrogenated amorphous silicon films prepared by glow discharge

Low-temperature optical properties of hydrogenated amorphous silicon

Crystal-field and spin-orbit interactions at the fundamental gap of AgGaSe2 chalcopyrite compound

Urbach tail and optical gap of G D a-Si:H films: Temperature and doping effects

Polarizability Studies of Amorphous Silicon

Dispersion energy and oscillation strength in a-Si:H

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