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A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

Scientific reports, 2021-03, Vol.11 (1), p.6111-6111, Article 6111

2021

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Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices

Applied physics letters, 2016-06, Vol.108 (23)

2016

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Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy

Applied physics letters, 2014-12, Vol.105 (24)

2014

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Shape memory effect, temperature distribution and mechanical properties of friction stir welded nitinol

Journal of alloys and compounds, 2019-03, Vol.776, p.334-345

2019

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A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

AIP advances, 2017-07, Vol.7 (7), p.075206-075206-7

2017

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Laser assisted wet texturing of flexible polyethylene terephthalate substrate using Nd 3+ :YAG laser for photovoltaics devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2017-12, Vol.226, p.78-85

2017

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Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Physica status solidi. PSS-RRL. Rapid research letters, 2022-09, Vol.16 (9), p.n/a

2022

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Threshold switching dynamics of pseudo-binary GeTe-Sb2Te3 phase change memory devices

Journal of physics. D, Applied physics, 2019-07, Vol.52 (37)

2019

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Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material

Scripta materialia, 2021-02, Vol.192, p.73-77

2021

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Sub-nanosecond threshold switching dynamics in GeSb 2 Te 4 phase change memory device

Journal of physics. D, Applied physics, 2020-01, Vol.53 (2), p.25103

2020

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Temperature‐Dependent Local Structural Changes of Amorphous Thin Ge 20 Te 80 Film Revealed by In Situ Resistance, X‐Ray Diffraction, and Raman Spectroscopy Studies

physica status solidi (b), 2020-12, Vol.257 (12)

2020

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Threshold switching dynamics of pseudo-binary GeTe–Sb 2 Te 3 phase change memory devices

Journal of physics. D, Applied physics, 2019-09, Vol.52 (37), p.375301

2019

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Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

Scientific reports, 2019-12, Vol.9 (1), p.1-6, Article 19251

2019

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A systematic evolution of optical band gap and local ordering in Ge1Sb2Te4 and Ge2Sb2Te5 materials revealed by in situ optical spectroscopy

Journal of physics. D, Applied physics, 2018-08, Vol.51 (37)

2018

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An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects

Semiconductor science and technology, 2020-01, Vol.35 (1)

2020

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Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device

Semiconductor science and technology, 2020-03, Vol.35 (3)

2020

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Temperature‐Dependent Local Structural Changes of Amorphous Thin Ge20Te80 Film Revealed by In Situ Resistance, X‐Ray Diffraction, and Raman Spectroscopy Studies

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Impact of Thermal Boundary Resistance on the Performance and Scaling of Phase-Change Memory Device

IEEE transactions on computer-aided design of integrated circuits and systems, 2020-09, Vol.39 (9), p.1834-1840

2020

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Temperature dependent structural evolution and crystallization properties of thin Ge15Te85 film revealed by in situ resistance, x-ray diffraction and scanning electron microscopic studies

Journal of physics. D, Applied physics, 2020-01, Vol.53 (2)

2020

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Influence of fluence, beam overlap and aging on the wettability of pulsed Nd3+:YAG nanosecond laser-textured Cu and Al sheets

Applied surface science, 2021-05, Vol.548, p.149259, Article 149259

2021

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Impact of process-induced variability on the performance and scaling of Ge 2 Sb 2 Te 5 Phase-change memory device

Semiconductor science and technology, 2020-03, Vol.35 (3), p.35031

2020

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An extremely fast, energy-efficient RESET process in Ge 2 Sb 2 Te 5 phase change memory device revealed by the choice of electrode materials and interface effects

Semiconductor science and technology, 2020-01, Vol.35 (1), p.15022

2020

Volltextzugriff (PDF)

A systematic evolution of optical band gap and local ordering in Ge 1 Sb 2 Te 4 and Ge 2 Sb 2 Te 5 materials revealed by in situ optical spectroscopy

Journal of physics. D, Applied physics, 2018-09, Vol.51 (37), p.375104

2018

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Rapid threshold switching dynamics of co-sputtered chalcogenide Ge15Te85 device for selector application

Semiconductor science and technology, 2021-01, Vol.36 (1)

2021

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Multilevel Switching in Phase‐Change Photonic Memory Devices

Physica status solidi. PSS-RRL. Rapid research letters, 2021-11, Vol.15 (11), p.n/a

2021

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A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices

Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy

Shape memory effect, temperature distribution and mechanical properties of friction stir welded nitinol

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

Laser assisted wet texturing of flexible polyethylene terephthalate substrate using Nd 3+ :YAG laser for photovoltaics devices

Ultrafast Threshold Switching Dynamics in Phase‐Change Materials

Threshold switching dynamics of pseudo-binary GeTe-Sb2Te3 phase change memory devices

Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material

Sub-nanosecond threshold switching dynamics in GeSb 2 Te 4 phase change memory device

Temperature‐Dependent Local Structural Changes of Amorphous Thin Ge 20 Te 80 Film Revealed by In Situ Resistance, X‐Ray Diffraction, and Raman Spectroscopy Studies

Threshold switching dynamics of pseudo-binary GeTe–Sb 2 Te 3 phase change memory devices

Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

A systematic evolution of optical band gap and local ordering in Ge1Sb2Te4 and Ge2Sb2Te5 materials revealed by in situ optical spectroscopy

An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects

Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device

Temperature‐Dependent Local Structural Changes of Amorphous Thin Ge20Te80 Film Revealed by In Situ Resistance, X‐Ray Diffraction, and Raman Spectroscopy Studies

Impact of Thermal Boundary Resistance on the Performance and Scaling of Phase-Change Memory Device

Temperature dependent structural evolution and crystallization properties of thin Ge15Te85 film revealed by in situ resistance, x-ray diffraction and scanning electron microscopic studies

Influence of fluence, beam overlap and aging on the wettability of pulsed Nd3+:YAG nanosecond laser-textured Cu and Al sheets

Impact of process-induced variability on the performance and scaling of Ge 2 Sb 2 Te 5 Phase-change memory device

An extremely fast, energy-efficient RESET process in Ge 2 Sb 2 Te 5 phase change memory device revealed by the choice of electrode materials and interface effects

A systematic evolution of optical band gap and local ordering in Ge 1 Sb 2 Te 4 and Ge 2 Sb 2 Te 5 materials revealed by in situ optical spectroscopy

Rapid threshold switching dynamics of co-sputtered chalcogenide Ge15Te85 device for selector application

Multilevel Switching in Phase‐Change Photonic Memory Devices

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