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Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Physica status solidi. PSS-RRL. Rapid research letters, 2021-09, Vol.15 (9), p.n/a

2021

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Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3566-3573

2011

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IEEE_Xplore

A Universal Method of Producing Transparent Electrodes Using Wide-Bandgap Materials

Advanced functional materials, 2014-03, Vol.24 (11), p.1575-1581

2014

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Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

IEEE electron device letters, 2011-08, Vol.32 (8), p.1125-1127

2011

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IEEE_Xplore

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2302-2307

2012

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IEEE_Xplore

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

IEEE electron device letters, 2013-09, Vol.34 (9), p.1181-1183

2013

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IEEE_Xplore

Forming-free SiN-based resistive switching memory prepared by RF sputtering

Physica status solidi. A, Applications and materials science, 2013-09, Vol.210 (9), p.1822-1827

2013

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Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

Journal of applied physics, 2011-01, Vol.109 (1)

2011

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Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (12), p.1879

2023

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Performance improvement of the resistive memory properties of InGaZnO thin films by using microwave irradiation

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EJ04-4

2014

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Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2013-07, Vol.7 (7), p.493-496

2013

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Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures

IEEE journal of quantum electronics, 2012-07, Vol.48 (7), p.891-896

2012

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IEEE_Xplore

Solution-processed high-k thin films as a resistive switching for ReRAM applications

Current Applied Physics, 2014, 14(3), , pp.462-466

2014

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A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory

IEEE electron device letters, 2013-02, Vol.34 (2), p.238-240

2013

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IEEE_Xplore

Investigation of Endurance Degradation in a CTF NOR Array Using Charge Pumping Methods

Transactions on Electrical and Electronic Materials, 2016, 17(1), , pp.25-28

2016

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Implementation of the High-Speed Feature Extraction Algorithm Based on Energy Efficient Threshold Value Selection

Transactions on electrical and electronic materials, 2020-04, Vol.21 (2), p.150-156

2020

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Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

Physica status solidi. PSS-RRL. Rapid research letters, 2013-07, Vol.7 (7), p.497-500

2013

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A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2398-2404

2010

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IEEE_Xplore

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Semiconductor science and technology, 2012-12, Vol.27 (12), p.125020

2012

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Substrate-Bias Assisted Hot Electron Injection Method for High-Speed, Low-Voltage, and Multi-Bit Flash Memories

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.124201-124201-5

2011

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Charge-trap flash memory using zirconium-nitride-based memristor switches

Journal of physics. D, Applied physics, 2014-11, Vol.48 (44), p.445102-445107

2014

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Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Materials research bulletin, 2013-12, Vol.48 (12), p.5080-5083

2013

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Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Materials research bulletin, 2013-12, Vol.48 (12), p.5084-5087

2013

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A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon-Oxide-Nitride-Oxide-Silicon Device for Reliable Four-Bit/Cell Operations

Japanese Journal of Applied Physics, 2010-11, Vol.49 (11), p.114203-114203-5

2010

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Charge trap flash memory using ferroelectric materials as a blocking layer

Applied physics letters, 2012-04, Vol.100 (17), p.173507-173507-4

2012

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Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

A Universal Method of Producing Transparent Electrodes Using Wide-Bandgap Materials

Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

Forming-free SiN-based resistive switching memory prepared by RF sputtering

Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Performance improvement of the resistive memory properties of InGaZnO thin films by using microwave irradiation

Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures

Solution-processed high-k thin films as a resistive switching for ReRAM applications

A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory

Investigation of Endurance Degradation in a CTF NOR Array Using Charge Pumping Methods

Implementation of the High-Speed Feature Extraction Algorithm Based on Energy Efficient Threshold Value Selection

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Substrate-Bias Assisted Hot Electron Injection Method for High-Speed, Low-Voltage, and Multi-Bit Flash Memories

Charge-trap flash memory using zirconium-nitride-based memristor switches

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon-Oxide-Nitride-Oxide-Silicon Device for Reliable Four-Bit/Cell Operations

Charge trap flash memory using ferroelectric materials as a blocking layer

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