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Molecular beam epitaxial growth and characterization of Cd-based II-VI wide-bandgap compounds on Si substrates

Journal of electronic materials, 2005-05, Vol.34 (5), p.655-661

2005

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Raman scattering study of the properties and removal of excess Te on CdTe surfaces

Applied physics letters, 1984-10, Vol.45 (7), p.789-791

1984

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Effects of As+ ion implantation on the Raman spectra of GaAs: spatial correlation interpretation

Applied physics letters, 1984, Vol.44 (1), p.122-124

1984

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Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

Applied physics letters, 1994-05, Vol.64 (20), p.2688-2690

1994

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A comparison of techniques for nondestructive composition measurements in CdZnTe substrates

Journal of electronic materials, 1995-05, Vol.24 (5), p.697-705

1995

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Interface sharpness in low-order III–V superlattices

Thin solid films, 1992-11, Vol.220 (1), p.176-183

1992

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Lattice dynamics of II-VI based diluted magnetic semiconductors

Journal of applied physics, 1990-10, Vol.68 (8), p.4332-4334

1990

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Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry

Journal of applied physics, 1993-06, Vol.73 (11), p.7739-7746

1993

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Fe implantation in In0.53Ga0.47As/InP

Journal of applied physics, 1989-01, Vol.65 (2), p.481-485

1989

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Interface sharpness during the initial stages of growth of thin, short-period III–V superlattices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993, Vol.11 (4), p.917-922

1993

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Photoluminescence quenching in Si1−xGex/Si multiple quantum wells grown with atomic hydrogen

Journal of applied physics, 1999-03, Vol.85 (5), p.2875-2880

1999

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Resonance Raman-scattering study of narrow-gap Hg1-xCdxTe

Semiconductor science and technology, 1990-03, Vol.5 (3S), p.S78-S80

1990

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Picosecond photoluminescence from bound excitons in Cd1-xZnxTe

Solid state communications, 1988-03, Vol.65 (9), p.1055-1058

1988

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Molecular-beam-epitaxial growth and characterization of In2Te3

Journal of applied physics, 1989-03, Vol.65 (5), p.1936-1941

1989

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Raman Scattering from (110)Hg0.8Cd0.2Te

Solid state communications, 1984-01, Vol.50 (10), p.891-894

1984

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Far infrared spatial probe of heteroepitaxial indium arsenide

Thin solid films, 1979-10, Vol.62 (3), p.357-360

1979

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Investigation of photons in HgCdTe using Raman scattering and far-infrared reflectivity

Semiconductor science and technology, 1990-03, Vol.5 (3S), p.S68-S72

1990

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Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTe

Journal of crystal growth, 1988-01, Vol.86 (1-4), p.93-99

1988

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Photoluminescence and Raman studies of CdS films grown by metal-organic chemical vapor deposition on Si{111} substrates

Thin solid films, 1992-10, Vol.219 (1), p.153-156

1992

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Near-band-edge photoluminescence from chemically treated CdTe surfaces

Journal of applied physics, 1990-03, Vol.67 (6), p.3107-3110

1990

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Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity

Semiconductor science and technology, 1990, Vol.5 (3S), p.S68-S72

1990

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Buffer layer–modulation-doped field-effect-transistor interactions in the Al0.33Ga0.67As/GaAs superlattice system

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1995-05, Vol.13 (3), p.787-791

1995

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Excitation wavelength and pump chopping frequency dependence of photoreflectance in Hg1-xCdxTe

Journal of crystal growth, 1988-01, Vol.86 (1-4), p.586-592

1988

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Far-infrared interband absorption in Hg1−xMnxTe

Infrared physics, 1978-12, Vol.18 (5-6), p.919-922

1978

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OMVPE growth of CdTe-ZnTe superlattices

Journal of crystal growth, 1988-01, Vol.86 (1-4), p.210-216

1988

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Molecular beam epitaxial growth and characterization of Cd-based II-VI wide-bandgap compounds on Si substrates

Raman scattering study of the properties and removal of excess Te on CdTe surfaces

Effects of As+ ion implantation on the Raman spectra of GaAs: spatial correlation interpretation

Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

A comparison of techniques for nondestructive composition measurements in CdZnTe substrates

Interface sharpness in low-order III–V superlattices

Lattice dynamics of II-VI based diluted magnetic semiconductors

Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry

Fe implantation in In0.53Ga0.47As/InP

Interface sharpness during the initial stages of growth of thin, short-period III–V superlattices

Photoluminescence quenching in Si1−xGex/Si multiple quantum wells grown with atomic hydrogen

Resonance Raman-scattering study of narrow-gap Hg1-xCdxTe

Picosecond photoluminescence from bound excitons in Cd1-xZnxTe

Molecular-beam-epitaxial growth and characterization of In2Te3

Raman Scattering from (110)Hg0.8Cd0.2Te

Far infrared spatial probe of heteroepitaxial indium arsenide

Investigation of photons in HgCdTe using Raman scattering and far-infrared reflectivity

Growth and characterization of Cd1−xZnxTe and Hg1−yZnyTe

Photoluminescence and Raman studies of CdS films grown by metal-organic chemical vapor deposition on Si{111} substrates

Near-band-edge photoluminescence from chemically treated CdTe surfaces

Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity

Buffer layer–modulation-doped field-effect-transistor interactions in the Al0.33Ga0.67As/GaAs superlattice system

Excitation wavelength and pump chopping frequency dependence of photoreflectance in Hg1-xCdxTe

Far-infrared interband absorption in Hg1−xMnxTe

OMVPE growth of CdTe-ZnTe superlattices

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